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GIGABYTE

GIGABYTE AORUS GP-ASM2NE6100TTTD 1TB M.2 2280 internal SSD

SKU CH-FFWV-0J6KQ MPN GP-ASM2NE6100TTTD

1 TB M.2 2280 NVMe SSD with PCIe 4.0 x4 interface, up to 5000 MB/s read and 4400 MB/s write, 1 GB DDR4 cache and full-body copper heatsink

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory Components3D TLC Toshiba BiCS4
  • InterfacePCI-Express 4.0 x4, NVMe 1.3

Options 1TB

  • Sequential reads reach 5000 MB/s via PCIe 4.0 x4
  • Sequential writes hit 4400 MB/s on the Phison controller
  • Random 4 KB reads deliver 750000 IOPS with 1GB DDR4 cache
  • Full-body copper heatsink covers both sides for sustained thermal performance
  • MTBF rated at 1.77 million hours using Toshiba BiCS4 3D TLC NAND

AORUS Gen4 NVMe SSD for gaming and content creation

The GIGABYTE AORUS GP-ASM2NE6100TTTD is a 1TB M.2 2280 internal solid state drive built for consumer workloads. It connects through a PCI-Express 4.0 x4 interface using the NVMe 1.3 protocol. A Phison PS5016-E16 controller made on a 28nm process manages eight NAND channels with 32 CE targets. A 1GB DDR4 DRAM cache assists with sustained throughput.

Sequential speeds of 5000 MBps read

The headline specification is the rated sequential performance: up to 5000 MBps read and up to 4400 MBps write. Random 4KB performance reaches 750,000 IOPS read and 700,000 IOPS write. Toshiba BiCS4 96-layer 3D TLC flash operating at 800 MT/s provides the storage medium. A full-body copper heat spreader covers the controller and NAND to manage thermals under load.

Suits builds with a PCIe 4.0 M.2 slot needing high

This drive suits enthusiasts who want Gen4 NVMe speeds and a robust heatsink in a standard M.2 2280 form factor. The 1.77 million hour MTBF and wear-leveling with over-provisioning support long-term reliability. Systems limited to PCIe 3.0 will not reach the rated sequential figures. Buyers needing higher capacity or a different controller architecture should evaluate other models.

주요 특징

  • Sequential reads reach 5000 MB/s via PCIe 4.0 x4
  • Sequential writes hit 4400 MB/s on the Phison controller
  • Random 4 KB reads deliver 750000 IOPS with 1GB DDR4 cache
  • Full-body copper heatsink covers both sides for sustained thermal performance
  • MTBF rated at 1.77 million hours using Toshiba BiCS4 3D TLC NAND

사양

BrandGIGABYTE
SeriesAORUS
ModelGP-ASM2NE6100TTTD
Part NumberGP-ASM2NE6100TTTD
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory Components3D TLC Toshiba BiCS4
InterfacePCI-Express 4.0 x4, NVMe 1.3
ControllerPhison
Cache1GB DDR4
Max Sequential ReadUp to 5000 MBps
Max Sequential WriteUp to 4400 MBps
4KB Random ReadUp to 750,000 IOPS
4KB Random WriteUp to 700,000 IOPS
MTBF1.77 million hours
HeatSinkwith HeatSink
FeaturesWear Leveling, Over-Provision technologies
TRIM & S.M.A.R.T supported
Fully Body Copper Heat Spreader
Power Consumption (Idle)18.8 mW
Power Consumption (Active)R: 6.6W; W: 6.4W
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Height11.25mm
Width23.50mm
Depth80.50mm
배송 무게0.20 kg
포장 크기135 × 79 × 33 mm

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이 상품에 대한 질문

Will this M.2 2280 drive fit in a laptop that only has a single-sided M.2 slot?

The drive has a dual-side design with components on both sides of the PCB, so it requires a double-sided M.2 slot and clearance for the integrated copper heatsink.

Does the drive need a motherboard with PCIe 4.0 to reach the advertised 5000 MB/s read speed?

Yes, the 5000 MB/s sequential read and 4400 MB/s write figures are rated on a PCIe 4.0 x4 link; on a PCIe 3.0 slot speeds will be limited to the 3.0 ceiling.

What does the 1GB DDR4 cache do for everyday use?

The onboard DDR4 DRAM cache stores the mapping table and accelerates small random read and write operations, keeping the drive responsive during mixed workloads.

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