SAMSUNG
SAMSUNG 9100 PRO MZ-VAP8T0BW 8TB internal SSD
M.2 2280 8TB PCIe 5.0 x4 NVMe SSD with up to 14800 MB/s read, 13400 MB/s write and 4800 TBW
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form FactorM.2 2280
- Capacity8TB
- Memory ComponentsSamsung V NAND TLC (V8)
- InterfacePCI-Express 5.0 x4
- Massive 8TB capacity stores huge game libraries and creative projects
- Sequential read up to 14800 MB/s loads large files in seconds
- Sequential write up to 13400 MB/s keeps content creation workflows moving
- Random read 2200000 IOPS and random write 2600000 IOPS accelerate AI and multitasking
- 4800 TBW endurance rating supports heavy daily workloads for years
8TB PCIe 5.0 NVMe Drive
The Samsung 9100 PRO MZ-VAP8T0BW is an internal SSD built for professionals and gamers who need maximum capacity and speed. It fits the M.2 2280 slot and uses Samsung V‑NAND TLC memory with a 5 nm controller. The drive targets heavy workloads such as AI processing, 4K‑plus video editing and large game libraries.
Capacity and Headroom
Eight terabytes provide space for massive project files, extensive game installs and long‑term archival without constant cleanup. Sequential reads reach 14800 MB/s and writes 13400 MB/s, while random performance hits 2200000 read IOPS and 2600000 write IOPS. The 4800 TBW endurance rating supports sustained heavy writes, though thermal limits in thin laptops may throttle sustained peaks.
Upgrade Path
This drive replaces earlier PCIe 4.0 or 3.0 NVMe SSDs when workflows demand double the bandwidth and higher random IOPS. The jump is worth it for users moving from 2 TB or 4 TB drives who need both capacity headroom and the 5.0 x4 interface for current‑gen platforms.
주요 특징
- Massive 8TB capacity stores huge game libraries and creative projects
- Sequential read up to 14800 MB/s loads large files in seconds
- Sequential write up to 13400 MB/s keeps content creation workflows moving
- Random read 2200000 IOPS and random write 2600000 IOPS accelerate AI and multitasking
- 4800 TBW endurance rating supports heavy daily workloads for years
사양
| Brand | SAMSUNG |
|---|---|
| Series | 9100 PRO |
| Model | MZ-VAP8T0BW |
| Part Number | MZ-VAP8T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 8TB |
| Memory Components | Samsung V NAND TLC (V8) |
| Interface | PCI-Express 5.0 x4 |
| Encryption | Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
| Max Sequential Read | Up to 14800 MBps |
| Max Sequential Write | Up to 13400 MBps |
| 4KB Random Read | Up to 2,200,000 IOPS |
| 4KB Random Write | Up to 2,600,000 IOPS |
| Terabytes Written (TBW) | 4800TB |
| HeatSink | without HeatSink |
| Power Consumption (Idle) | 5.7mW Device Sleep (L1.2) |
| Power Consumption (Active) | 9.0W / 8.2W (Read/Write) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 9g |
이 상품에 대한 질문
Will the 9100 PRO MZ-VAP8T0BW work in a motherboard that only supports PCIe 4.0?
Yes. The drive uses a PCIe 5.0 x4 interface and will negotiate down to PCIe 4.0 speeds on older boards while keeping full NVMe functionality.
How can I verify the 9100 PRO is delivering its rated 14800 MB/s read and 13400 MB/s write speeds after installation?
Run a sequential benchmark such as CrystalDiskMark using a 1 GB test file on an empty drive; sustained results should approach the published 14800 MB/s read and 13400 MB/s write figures.
Does the 9100 PRO 8TB M.2 2280 drive include a heatsink or mounting screw in the box?
The specification lists the drive as without heatsink and 2.38 mm tall; only the bare M.2 module is included, so a motherboard standoff screw and any cooling solution must be sourced separately.
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