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SAMSUNG

SAMSUNG 9100 PRO MZ-VAP8T0BW 8TB internal SSD

SKU CH-R9B6-XZMFH

M.2 2280 8TB PCIe 5.0 x4 NVMe SSD with up to 14800 MB/s read, 13400 MB/s write and 4800 TBW

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity8TB
  • Memory ComponentsSamsung V NAND TLC (V8)
  • InterfacePCI-Express 5.0 x4
  • Massive 8TB capacity stores huge game libraries and creative projects
  • Sequential read up to 14800 MB/s loads large files in seconds
  • Sequential write up to 13400 MB/s keeps content creation workflows moving
  • Random read 2200000 IOPS and random write 2600000 IOPS accelerate AI and multitasking
  • 4800 TBW endurance rating supports heavy daily workloads for years

8TB PCIe 5.0 NVMe Drive

The Samsung 9100 PRO MZ-VAP8T0BW is an internal SSD built for professionals and gamers who need maximum capacity and speed. It fits the M.2 2280 slot and uses Samsung V‑NAND TLC memory with a 5 nm controller. The drive targets heavy workloads such as AI processing, 4K‑plus video editing and large game libraries.

Capacity and Headroom

Eight terabytes provide space for massive project files, extensive game installs and long‑term archival without constant cleanup. Sequential reads reach 14800 MB/s and writes 13400 MB/s, while random performance hits 2200000 read IOPS and 2600000 write IOPS. The 4800 TBW endurance rating supports sustained heavy writes, though thermal limits in thin laptops may throttle sustained peaks.

Upgrade Path

This drive replaces earlier PCIe 4.0 or 3.0 NVMe SSDs when workflows demand double the bandwidth and higher random IOPS. The jump is worth it for users moving from 2 TB or 4 TB drives who need both capacity headroom and the 5.0 x4 interface for current‑gen platforms.

Highlights

  • Massive 8TB capacity stores huge game libraries and creative projects
  • Sequential read up to 14800 MB/s loads large files in seconds
  • Sequential write up to 13400 MB/s keeps content creation workflows moving
  • Random read 2200000 IOPS and random write 2600000 IOPS accelerate AI and multitasking
  • 4800 TBW endurance rating supports heavy daily workloads for years

Specifications

BrandSAMSUNG
Series9100 PRO
ModelMZ-VAP8T0BW
Part NumberMZ-VAP8T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity8TB
Memory ComponentsSamsung V NAND TLC (V8)
InterfacePCI-Express 5.0 x4
EncryptionClass 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 14800 MBps
Max Sequential WriteUp to 13400 MBps
4KB Random ReadUp to 2,200,000 IOPS
4KB Random WriteUp to 2,600,000 IOPS
Terabytes Written (TBW)4800TB
HeatSinkwithout HeatSink
Power Consumption (Idle)5.7mW Device Sleep (L1.2)
Power Consumption (Active)9.0W / 8.2W (Read/Write)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight9g

Questions about this item

Will the 9100 PRO MZ-VAP8T0BW work in a motherboard that only supports PCIe 4.0?

Yes. The drive uses a PCIe 5.0 x4 interface and will negotiate down to PCIe 4.0 speeds on older boards while keeping full NVMe functionality.

How can I verify the 9100 PRO is delivering its rated 14800 MB/s read and 13400 MB/s write speeds after installation?

Run a sequential benchmark such as CrystalDiskMark using a 1 GB test file on an empty drive; sustained results should approach the published 14800 MB/s read and 13400 MB/s write figures.

Does the 9100 PRO 8TB M.2 2280 drive include a heatsink or mounting screw in the box?

The specification lists the drive as without heatsink and 2.38 mm tall; only the bare M.2 module is included, so a motherboard standoff screw and any cooling solution must be sourced separately.

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