SAMSUNG 970 EVO MZ-V7E1T0E 1TB internal SSD
- Internal Solid Stat…
- Consumer
SAMSUNG
M.2 2280 NVMe SSD with 500GB capacity, sequential read up to 3400 MBps and write up to 2300 MBps
The Samsung 970 EVO MZ-V7E500E is a 500GB internal SSD built for consumer PCs. It uses a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol and V-NAND 3-bit MLC memory. A Samsung Phoenix controller and 512MB Low Power DDR4 SDRAM cache manage data flow.
The drive fits a standard M.2 2280 slot, meaning it mounts directly on the motherboard without cables. Sequential reads reach up to 3400 MBps and writes up to 2300 MBps. Random read IOPS hit 370,000 at QD32 and 15,000 at QD1. Random write IOPS reach 450,000 at QD32 and 50,000 at QD1. Dynamic Thermal Guard protects against overheating between 0°C and 70°C. Active power averages 5.7W with a 10W burst maximum.
Verify your motherboard has an M.2 slot wired for PCIe Gen 3.0 x4 and NVMe support. Confirm the BIOS can boot from an NVMe device if this will be the OS drive. Ensure the slot accepts 2280-length modules and that clearance allows the drive to seat fully. Samsung Magician software is available for monitoring and maintenance.
| Brand | SAMSUNG |
|---|---|
| Series | 970 EVO |
| Model | MZ-V7E500E |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 500GB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | 512MB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 3400 MBps |
| Max Sequential Write | Up to 2300 MBps |
| 4KB Random Read | QD32: Up to 370,000 IOPS QD1: Up to 15,000 IOPS |
| 4KB Random Write | QD32: Up to 450,000 IOPS QD1: Up to 50,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Non-Volatile Memory Express (NVMe) 970 EVO 500GB NVMe SSDs with a newly enhanced Phoenix controller outperform our previous 960 EVO 500GB model with exceptionally fast sequential read/write speeds up to 3,400/2,300 MB/s. They also support PCI Express (PCIe) Gen 3 x4 lanes to provide high bandwidth and low latency, making them perfect for business professionals who need cutting edge-performance for high-end computing. TurboWrite Technology Samsung's intelligent TurboWrite technology helps to maximize your computing ability, accelerating write speeds above and beyond the already except |
| Power Consumption (Idle) | 30 mW (max) |
| Power Consumption (Active) | Average: 5.7W / Maximum: 10W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| 배송 무게 | 0.08 kg |
| 포장 크기 | 141 × 98 × 24 mm |
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The drive uses PCIe Gen 3.0 x4 with NVMe 1.3, capping sequential read at 3400 MBps and sequential write at 2300 MBps.
It uses the M.2 2280 form factor, so the motherboard slot must accept 80 mm length modules.
Insert the drive at an angle into the M.2 slot, press down, and secure it with the retention screw; people often forget the screw.
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