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Green rectangular M.2 2280 SSD with black label and gold edge connector

SAMSUNG

SAMSUNG 990 2TB M.2 2280 internal SSD MZ-V9V2T0B/AM

SKU CH-V731-9EA8B MPN MZ-V9V2T0B/AM

A 2TB M.2 2280 NVMe SSD delivering up to 7250 MBps read and 6450 MBps write with 800TB endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity2TB
  • Memory ComponentsSamsung V NAND
  • InterfacePCI-Express 4.0 x4

Capacity

  • 1TB
  • 2TB

취소선으로 표시된 버전은 존재하지만, 이곳에서는 취급하지 않습니다.

  • Up to 7250 MB/s sequential read speeds for fast system responsiveness
  • Up to 6450 MB/s sequential write speeds for quick large-file transfers
  • Up to 1,200,000 IOPS random write performance for responsive multitasking
  • 800 TBW endurance rating for long-term reliability
  • AES 256 encryption with TCG/Opal v2.0 for hardware-based data protection

Samsung 990 2TB M.2 2280 NVMe SSD

The Samsung 990 2TB M.2 2280 NVMe SSD uses Samsung V NAND and an in-house controller over a PCI-Express 4.0 x4 link. It delivers sequential reads up to 7250 MBps and writes up to 6450 MBps with 4KB random performance of 850000 read and 1200000 write IOPS. The drive is rated for 800TB written and targets consumer workloads.

Build quality and daily use

The single-sided M.2 2280 form factor fits standard motherboard slots without blocking adjacent components. Host Memory Buffer caching reduces component count while maintaining speed. Hardware encryption covers Class 0 AES 256, TCG/Opal v2.0 and MS eDrive IEEE1667 for data-at-rest protection. Active power averages 4.3W read and 3.8W write.

Practical limits of PCI-Express 4.0 x4

The x4 lane width caps peak throughput at the PCI-Express 4.0 ceiling, so heavier queues saturate the bus before the flash. Systems limited to PCI-Express 3.0 will halve the available bandwidth. Idle power drops to 55mW in PS3 APST and 3mW in PS4 L1.2 states. Sustained write temperatures may trigger throttling without adequate motherboard heatsinking.

주요 특징

  • Up to 7250 MB/s sequential read speeds for fast system responsiveness
  • Up to 6450 MB/s sequential write speeds for quick large-file transfers
  • Up to 1,200,000 IOPS random write performance for responsive multitasking
  • 800 TBW endurance rating for long-term reliability
  • AES 256 encryption with TCG/Opal v2.0 for hardware-based data protection

사양

BrandSAMSUNG
Series990
ModelMZ-V9V2T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity2TB
Memory ComponentsSamsung V NAND
InterfacePCI-Express 4.0 x4
ProtocolNVMe 2.0
ControllerIn-House Controller
CacheHMB (Host Memory Buffer)
EncryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 7250 MBps
Max Sequential WriteUp to 6450 MBps
4KB Random ReadUp to 850,000 IOPS
4KB Random WriteUp to 1,200,000 IOPS
Terabytes Written (TBW)800TB
Power Consumption (Idle)PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
Power Consumption (Active)Read/Write, Average: 4.3W / 3.8W
Height2.38mm
Width22.15mm
Depth80.15mm
Weight6g
배송 무게0.09 kg
포장 크기168 × 99 × 23 mm

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이 상품에 대한 질문

What does the PCI-Express 4.0 x4 interface cap the sequential read speed at?

The PCI-Express 4.0 x4 interface supports up to 7250 MBps sequential read and 6450 MBps sequential write.

What physical slot and form factor does the M.2 2280 drive require?

It fits a standard M.2 2280 slot measuring 22 mm wide by 80 mm long on the motherboard.

How is the drive installed and which step is often missed?

Insert the drive at an angle into the M.2 slot, press it flat, and secure it with the motherboard screw; many forget to fasten that screw.

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