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Green rectangular laptop memory module with black chips and gold contacts

SAMSUNG

Samsung 8GB DDR4 3200 CL22 1Rx8 260-Pin SODIMM M471A1K43DB1-CWE

SKU CH-4PME-TP51Q

8 GB DDR4 SODIMM running at 3200 MHz with CL22 latency, 1.2 V operation and Samsung 1Rx8 module M471A1K43DB1-CWE

  • Capacity8GB
  • Type260-Pin DDR4 SO-DIMM
  • SpeedDDR4 3200 (PC4 25600)
  • CAS LatencyCL22
  • Voltage1.20V
  • ECCNo
  • 8 GB capacity expands multitasking headroom for everyday workloads
  • DDR4 3200 speed delivers 25600 MT/s bandwidth for responsive performance
  • CL22 latency at 1.20 V balances quick access with low power draw
  • 260-pin SODIMM form factor fits standard laptop memory slots
  • Samsung 1Rx8 chip layout (1G x 8) x 8 ensures reliable single-rank operation

Samsung 8GB DDR4 3200 SODIMM

This 8GB DDR4 3200 module uses the 260-pin SO-DIMM form factor for laptop memory upgrades. It runs at 1.20V with CL22 latency and an unbuffered, non-ECC design. The Rev D component layout uses eight 1G x 8 chips in a single-rank configuration. Buyers needing ECC error correction or registered buffering should choose a different module.

Installation ease and common issues

The module inserts into a standard 260-pin DDR4 SO-DIMM slot at a shallow angle before clicking into the retention clips. No heat spreader is fitted, so the low profile clears tight chassis spaces. A frequent error is mixing this CL22 stick with faster CL-timed modules, which forces the system to run at the slowest common timings. Another issue occurs when the laptop BIOS does not automatically select the 3200 speed, leaving the memory at a lower JEDEC frequency.

Compatibility checks before ordering

Verify that the laptop accepts DDR4 SO-DIMM memory and has a free 260-pin slot. Confirm the platform supports 1.20V operation and can address an 8GB single-rank module. Check the manufacturer’s qualified-vendor list or manual for the exact part number M471A1K43DB1-CWE to avoid BIOS incompatibilities. Ensure the maximum supported capacity per slot is not lower than 8GB.

Najważniejsze cechy

  • 8 GB capacity expands multitasking headroom for everyday workloads
  • DDR4 3200 speed delivers 25600 MT/s bandwidth for responsive performance
  • CL22 latency at 1.20 V balances quick access with low power draw
  • 260-pin SODIMM form factor fits standard laptop memory slots
  • Samsung 1Rx8 chip layout (1G x 8) x 8 ensures reliable single-rank operation

Specyfikacja

BrandSAMSUNG
Capacity8GB
Type260-Pin DDR4 SO-DIMM
SpeedDDR4 3200 (PC4 25600)
CAS LatencyCL22
Voltage1.20V
ECCNo
Buffered/RegisteredUnbuffered / Unregistered
Heat SpreaderNo

Pytania dotyczące tego produktu

How can I confirm the module is running at 3200 MHz with CL22 after installation?

Open Task Manager or CPU-Z and check the memory tab; it should report 3200 MT/s and a CAS latency of 22.

What comes in the box and is anything else required for a laptop upgrade?

The box contains one 8 GB 260-pin DDR4 SODIMM; no extra parts are needed if the laptop has a free slot.

Should I choose the 1Rx8 version or look for a different rank configuration?

The 1Rx8 layout uses eight 1 Gbit x 8 chips and is the standard density for 8 GB DDR4 SODIMMs.

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