Aceptamos criptomonedas — así, las criptos que usted tiene pueden comprar hardware real.Pague en cripto y gástela en hardware real. Envío asegurado gratis a nivel mundial a partir de $399. Cajas neutras, sin marca, enviadas desde Alemania.Envío asegurado gratis a partir de $399. Su cotización queda bloqueada 30 minutos en cuanto se abre el pago.Cotización bloqueada 30 minutos. Todos los artículos vienen sellados, con el número de serie verificado y cubiertos por una garantía de 24 meses.Sellado, con 24 meses de garantía.

Artículos guardados Iniciar sesión
Samsung 850 EVO M.2 2280 SATA SSD 500GB black circuit board gold edge connector

SAMSUNG

SAMSUNG 850 EVO M.2 2280 500GB SATA internal SSD MZ-N5E500BW

SKU CH-RXW1-85KX6 MPN MZ-N5E500BW

M.2 2280 SATA internal SSD with 500 GB capacity, 3D V-NAND and up to 540 MB/s read plus 500 MB/s write speeds

  • Device TypeInternal SSD Single Unit Version
  • Form FactorM.2 2280
  • Capacity500GB
  • Memory Components3D NAND
  • InterfaceSATA III
  • ControllerSamsung MGX Controller

Options 500GB

  • 3D V-NAND stacks cells vertically for higher density and endurance
  • Sequential read up to 540 MB/s and write up to 500 MB/s for fast file transfers
  • Random read up to 97,000 IOPS and write up to 89,000 IOPS for responsive multitasking
  • AES 256-bit full-disk encryption protects data without performance loss
  • M.2 2280 form factor at 2.30 mm height fits ultra-thin laptops and PCs

Samsung 850 EVO M.2 500GB SATA SSD

The Samsung 850 EVO M.2 2280 delivers 500GB of storage through a SATA interface for ultra-thin laptops and PCs. It uses 3D V-NAND technology and a Samsung MGX controller with 1GB of low power DDR3 cache. Sequential reads reach 540 MBps and writes reach 500 MBps. Random performance hits 97,000 read IOPS and 89,000 write IOPS.

Thermals noise and power efficiency

The drive operates from 0°C to 70°C with no moving parts, so it runs silently. The 3D V-NAND architecture lowers power draw compared with planar NAND, supporting industry-leading energy efficiency. MTBF is rated at 1,500,000 hours and shock resistance reaches 1,500G for physical durability.

Upgrade from hard drives or early SSDs

Replacing a mechanical hard drive with this SSD cuts boot and load times dramatically thanks to SATA III speeds and high random IOPS. The jump is worth it when you need faster large-file transfers, full-disk AES 256-bit encryption, and reliable operation in thin chassis. Samsung Data Migration and Magician software simplify the switch.

Puntos fuertes

  • 3D V-NAND stacks cells vertically for higher density and endurance
  • Sequential read up to 540 MB/s and write up to 500 MB/s for fast file transfers
  • Random read up to 97,000 IOPS and write up to 89,000 IOPS for responsive multitasking
  • AES 256-bit full-disk encryption protects data without performance loss
  • M.2 2280 form factor at 2.30 mm height fits ultra-thin laptops and PCs

Especificaciones

BrandSAMSUNG
Series850 EVO
ModelMZ-N5E500BW
Device TypeInternal SSD Single Unit Version
Form FactorM.2 2280
Capacity500GB
Memory Components3D NAND
InterfaceSATA III
ControllerSamsung MGX Controller
Max Sequential ReadUp to 540 MBps
Max Sequential WriteUp to 500 MBps
4KB Random ReadUp to 97,000 IOPS
4KB Random WriteUp to 89,000 IOPS
MTBF1,500,000 hours
FeaturesInnovative 3D V-NAND Technology
Incredible Read/Write Performance
Enhanced Endurance and Reliability
The Most Evolved SSD for Ultra-thin Laptops and PCs
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5ms (Half sine)
Height2.30mm
Width22.00mm
Depth80.00mm
Weight0.09 lb.
Peso de envío0.07 kg
Dimensiones del paquete142 × 99 × 23 mm

Otras versiones de este modelo

3 más en esta gama

Misma familia, con memoria, disipador o frecuencia diferentes — compare antes de decidirse.

Preguntas sobre este artículo

Will this M.2 2280 SATA drive fit my ultra-thin laptop's slot?

The drive measures 22.00 mm wide, 80.00 mm long and 2.30 mm high, matching the standard M.2 2280 form factor used in most ultra-thin laptops.

What software tools are available for migration and drive management?

Samsung provides free Data Migration and Magician software downloads to simplify cloning, firmware updates and performance monitoring.

How does the 3D V-NAND and DDR3 cache affect real-world speed?

Sequential reads reach 540 MBps and writes 500 MBps, while 4 KB random reads hit 97,000 IOPS and writes 89,000 IOPS thanks to the MGX controller and 1 GB DDR3 cache.

También en este pasillo

Los clientes también compararon

Mismo estante, mismo pago — ocho criptomonedas y un tipo de cambio fijado 30 minutos.