SAMSUNG
SAMSUNG 970 EVO PLUS MZ-V7S1T0BW 1TB M.2 2280 internal SSD
1 TB PCIe 3.0 x4 NVMe M.2 2280 drive with V-NAND 3-bit MLC, 3500 MB/s read, 3300 MB/s write and 600 TBW endurance
- Device TypeInternal Solid State Drive (SSD)
- Used ForConsumer
- Form FactorM.2 2280
- Capacity1TB
- Memory ComponentsV-NAND 3-bit MLC
- InterfacePCIe Gen 3.0 x4, NVMe 1.3
- Up to 3500 MBps sequential read for fast boot and load times
- Up to 3300 MBps sequential write for quick file saves and installs
- 600 TBW endurance rating for long-lasting heavy workloads
- 5 million hours MTBF for dependable daily operation
- 1GB DDR4 cache to sustain high-speed transfers
Samsung 970 EVO Plus 1TB NVMe SSD
The Samsung 970 EVO Plus MZ-V7S1T0BW is a 1TB internal solid state drive built for tech enthusiasts, hardcore gamers and professionals who need unrivalled performance and superior reliability. It uses a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol and Samsung V-NAND 3-bit MLC memory. The Phoenix controller is paired with 1GB Low Power DDR4 SDRAM cache.
PCIe Gen 3.0 x4 interface limits
The drive connects through a PCIe Gen 3.0 x4 link governed by the NVMe 1.3 specification. Sequential throughput caps at 3500 MBps read and 3300 MBps write. Random 4KB performance reaches 600000 IOPS read and 550000 IOPS write at QD32, dropping to 19000 IOPS read and 60000 IOPS write at QD1. Active power draw averages 6W with a 9W burst ceiling and 30 mW idle. Operating temperature spans 0°C to 70°C.
1TB capacity and 600 TBW endurance
The 1TB capacity provides ample space for operating systems, large game libraries and professional project files. Endurance is rated at 600 TBW, meaning the drive can absorb 600 terabytes of written data over its warranted life. MTBF is rated at 1500000 hours. Workloads exceeding sustained sequential writes or continuous high queue-depth random writes will hit the interface bandwidth ceiling and controller thermal limits before the NAND wears out.
Puntos fuertes
- Up to 3500 MBps sequential read for fast boot and load times
- Up to 3300 MBps sequential write for quick file saves and installs
- 600 TBW endurance rating for long-lasting heavy workloads
- 5 million hours MTBF for dependable daily operation
- 1GB DDR4 cache to sustain high-speed transfers
Especificaciones
| Brand | SAMSUNG |
|---|---|
| Series | 970 EVO PLUS |
| Model | MZ-V7S1T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | Samsung 1GB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 3300 MBps |
| 4KB Random Read | QD32: Up to 600,000 IOPS QD1: Up to 19,000 IOPS |
| 4KB Random Write | QD32: Up to 550,000 IOPS QD1: Up to 60,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Reliability: 600 TBW Always Evolving SSD The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing. Level up Performance The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53% faster than the 970 EVO. Powered by the latest V-NAND technology - which brings greater NAND performance and higher power efficiency - along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWr |
| Power Consumption (Idle) | Max. 30 mW |
| Power Consumption (Active) | Average: 6W Maximum: 9W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| Peso de envío | 0.05 kg |
| Dimensiones del paquete | 127 × 76 × 25 mm |
Preguntas sobre este artículo
Should I pick the 1TB 970 EVO Plus or a smaller capacity?
The 1TB model provides 600 TBW endurance and 3500 MBps sequential read, giving more headroom for large projects than lower-capacity versions.
What does the 3500 MBps sequential read mean for everyday use?
It lets the drive load games, apps and large files at near-peak PCIe Gen 3.0 x4 bandwidth, so boot and level-load times stay short.
How does the PCIe Gen 3.0 x4 NVMe 1.3 interface limit real-world speed?
The four-lane Gen 3.0 link caps throughput around 3500 MBps read and 3300 MBps write, which this drive reaches in sustained transfers.
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