Toshiba
Toshiba KXG60ZNV512GProduct 512 GB internal hard drive M.2 2280 PCI Express 3.1 x4
512 GB M.2 2280 PCI Express 3.1 x4 SSD with 96-layer 3D TLC flash and SLC cache reaching 3180 MB/s read and 2960 MB/s write
- NAND Flash Memory TypeSLC
- Up to 3180 MB/s sequential read speed
- Up to 2960 MB/s sequential write speed
- 355000 random read IOPS for responsive multitasking
- 365000 random write IOPS for fast data saving
- 7 W active power draw suits mobile PCs
XG6 512 GB M.2 2280 SSD
The Toshiba XG6 KXG60ZNV512G is a 512 GB solid-state drive built on 96-layer 3D TLC BiCS FLASH with an SLC cache. It uses a single-sided M.2 2280 form factor and connects through a PCI Express 3.1 x4 interface. Sequential speeds reach up to 3180 MB/s read and 2960 MB/s write, with random performance up to 355000 read and 365000 write IOPS. Active power consumption stays at 4.7 W or less.
Suits mobile PCs, gaming rigs
The drive targets power-sensitive laptops, performance-oriented desktops and data-centre roles such as server boot, caching and logging. Buyers who need capacities beyond 1024 GB or a self-encrypting model with TCG Opal 2.01 should evaluate other options. The single-sided layout fits space-constrained boards, but systems limited to PCIe 2.0 will not realise the rated throughput.
PCI Express 3.1 x4 interface decides compatibility
The PCI Express 3.1 x4 link is the single specification that determines whether this drive works at its rated speed. A motherboard or laptop must provide an M.2 slot wired for PCIe 3.1 x4; slots limited to PCIe 2.0 or x2 lanes will cap sequential and random performance. No other interface or protocol is supported by this model.
Puntos fuertes
- Up to 3180 MB/s sequential read speed
- Up to 2960 MB/s sequential write speed
- 355000 random read IOPS for responsive multitasking
- 365000 random write IOPS for fast data saving
- 7 W active power draw suits mobile PCs
Especificaciones
| Brand | TOSHIBA |
|---|---|
| NAND Flash Memory Type | SLC |
Preguntas sobre este artículo
Will the 96-layer 3D TLC NAND in this 512 GB drive need replacement before the controller wears out?
The XG6 series uses 96-layer BiCS FLASH 3D TLC with SLC cache, a design that spreads writes across the whole array so the flash typically outlasts the controller in normal workloads.
What performance limit appears first when the drive runs sustained writes at PCIe 3.1 x4?
Sequential write tops out at 2960 MB/s, so the PCIe 3.1 x4 interface saturates before the NAND reaches its internal throughput ceiling.
How much heat and power should I expect from the KXG60ZNV512G during all-day operation?
Active power stays at 4.7 W or less and standby drops below 3 mW, so the single-sided M.2 2280 module generates minimal heat even under continuous load.
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