Intel Optane SSD DC P4801X 200GB M.2 22110 enterprise SSD SSDPEL1K200GA01
- M.2 22110
- 200GB
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SAMSUNG
M.2 2280 NVMe drive with 512GB V-NAND 2-bit MLC, PCIe Gen 3.0 x4, sequential speeds up to 3500/2300 MBps and 370K/500K IOPS random performance
The Samsung 970 PRO MZ-V7P512E is a 512GB internal solid state drive using the M.2 2280 form factor. It connects via a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol. The drive employs V-NAND 2-bit MLC memory and a Samsung Phoenix controller with 512MB of Low Power DDR4 SDRAM cache.
This drive is designed for high-performance client PC applications and engineering workloads requiring fast sequential and random access. The supplier notes it is not designed for server or data centre applications and warranty does not support such usage. Buyers building enterprise arrays should look at drives rated for those environments.
The maximum sequential read speed is rated at 3500 MBps with sequential write up to 2300 MBps. Random read reaches 370,000 IOPS at QD32 and random write reaches 500,000 IOPS at QD32. These figures determine whether the drive meets the throughput needs of the intended workload.
| Brand | SAMSUNG |
|---|---|
| Series | 970 PRO |
| Model | MZ-V7P512E |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 512GB |
| Memory Components | V-NAND 2-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | 512MB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 2300 MBps |
| 4KB Random Read | QD32: 370,000 IOPS QD1: 15,000 IOPS |
| 4KB Random Write | QD32: 500,000 IOPS QD1: 55,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Non-Volatile Memory Express (NVMe) 970 PRO 512GB NVMe SSDs with a newly enhanced Phoenix controller outperform our previous 960 PRO 512GB model with exceptionally fast sequential read/write speeds up to 3,500/2,300 MB/s and random read/write speeds up to 370/500K IOPS. They also support PCI Express (PCIe) Gen 3 x4 lanes to provide high bandwidth and low latency, making them perfect for business professionals who need cutting edge-performance for high-end computing. Dynamic Thermal Guard This feature constantly monitors and works to maintain ideal temperatures to protect the integrity |
| Power Consumption (Idle) | 30 mW (max) |
| Power Consumption (Active) | Average: 5.2W / Maximum: 8.5W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| Poids d’expédition | 0.08 kg |
| Dimensions du colis | 175 × 102 × 25 mm |
The drive is supplied in a plain white box containing only the M.2 2280 module. A motherboard mounting screw and any heatsink must be sourced separately.
At 512GB the drive delivers up to 3500 MBps sequential read and 2300 MBps sequential write with 512MB DDR4 cache, making it suitable for heavy client workloads and engineering applications.
It represents the peak throughput over the PCIe Gen 3.0 x4 link when reading large contiguous files; real-world speed depends on motherboard lane allocation, thermal conditions and the workload mix.
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