A-Tech 4GB DDR3L 1600 ECC SODIMM 2Rx8 1.35V 204-Pin
- 4GB
- 204-Pin DDR3 SO-DIMM
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A-Tech
4GB DDR4 2133 MHz ECC SODIMM adds error-correcting memory to compatible laptops and microservers
Capacity 4GB
This 4 GB DDR4 ECC SODIMM runs at 2133 MHz with CL15 latency and operates at 1.2 V. It uses a 260-pin unbuffered single-rank design built with major-brand DRAM ICs. The module targets microservers, mobile workstations and NAS devices that require error-correcting memory.
Verify that your system explicitly supports DDR4 ECC unbuffered SODIMMs before ordering. Standard consumer laptops often disable ECC functionality or accept only non-ECC modules. Confirm the motherboard or chassis has a free 260-pin SO-DIMM slot and consult the manual for population rules.
This module fits builders upgrading an ECC-enabled microserver, mobile workstation or NAS appliance that uses DDR4 SODIMMs. It will not work in systems that lack ECC support or require registered DIMMs. Buyers needing higher capacity per slot or non-ECC memory for a standard laptop should look elsewhere.
| Brand | A-Tech |
|---|---|
| Series | A-Tech DDR4 ECC SODIMM Memory RAM |
| Model | A-Tech 4GB 1Rx8 PC4-2133P-T ECC SODIMM RAM Module |
| Part Number | NE-SS-1623 |
| Capacity | 4GB |
| Type | 260-Pin DDR4 SO-DIMM |
| Speed | DDR4 2133 (PC4 17000) |
| CAS Latency | CL15 |
| Voltage | 1.20V |
| ECC | Yes |
| Buffered/Registered | Unbuffered |
| Heat Spreader | No |
| Features | Major Brand DRAM IC Chips / ECC Error Correcting Technology |
| Recommend Use | AMD & Intel Compatible |
| Option | Major Brand DRAM IC Chips |
Other versions of this model
Same family, different memory, cooler or clock — compare before you commit.
The module ships as a single 4GB stick; no tools, adapters or extra components are supplied.
This is the sole capacity and speed offered under part number NE-SS-1623; confirm your system accepts DDR4 ECC unbuffered SODIMMs before ordering.
CL15 indicates 15-cycle CAS latency at 2133 MHz, giving standard DDR4 response times for ECC error correction during typical multitasking.
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