NEMIX RAM 64GB DDR4 3200 4Rx4 1.2V 288-PIN ECC LRDIMM server RAM
- DDR4 3200 (PC4 2560…
- 22
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A-Tech
32 GB DDR3L 1600 ECC LRDIMM with Samsung chips, quad-rank 4Rx4 at 1.35 V, Supermicro certified
This 32GB module is built to the Supermicro MEM-DR332L-SL04-LR16 specification using Samsung chips. It targets administrators upgrading or repairing Supermicro platforms that require DDR3L 1600 ECC LRDIMM memory. The quad-rank 4Rx4 organisation and 240-pin form factor match the certified part number exactly.
Operating at 1.35V reduces power draw compared with standard DDR3 1.5V modules. Load-reduced buffering lightens the electrical load on the memory controller, helping to keep temperatures lower under sustained server workloads. CL11 latency at 1600MHz delivers stable throughput for typical virtualisation and database tasks.
Supermicro certification means the module has been validated on the vendor's qualified vendor list, reducing the risk of POST errors or mismatched timings. The Samsung M386B4G70DM0-YK0 die ensures consistent quality across the 32GB capacity. A-Tech adds lifetime warranty coverage and US-based technical support for the life of the product.
| Brand | SuperMicro |
|---|---|
| Series | Supermicro Certified |
| Model | MEM-DR332L-SL04-LR16 |
| Capacity | 32GB |
| Speed | DDR3L 1600 (PC3L 12800) |
| CAS Latency | CL11 |
| Voltage | 1.35V |
| ECC | Yes |
| Buffered/Registered | Load Reduced |
| Rank | 4Rx4 |
| Chipset | Samsung Chipset |
| Features | Supermicro Certified MEM-DR332L-SL04-LR16 (M386B4G70DM0-YK0) |
Align the notch on the module with the key in the 240-pin slot, press firmly until both latches click, then verify in BIOS that the 32GB module registers at 1600MHz with ECC enabled — the step most often missed is seating the module fully so both latches engage.
No routine maintenance is required; if a memory error appears, run a memtest86 pass to confirm the fault, then replace the single 32GB module — the Samsung chipset and Supermicro certification mean it either runs reliably or is swapped as a unit.
The 1600MHz DDR3L bus and CL11 latency set the throughput ceiling; under continuous load the memory controller hits bandwidth saturation before the 1.35V thermal envelope becomes a constraint.
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