EN-Labs 11-001-366 PCIe x4 USB 3.2 10Gbps 5-port card
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- 12CM Case fan,screw…
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Computer Memory Solutions
8GB DDR4 2133 SODIMM module built for Samsung 5 Series NP530E5M-X02US laptops
This 8GB DDR4 SO-DIMM module is built for the Samsung 5 Series NP530E5M-X02US laptop. It delivers a straightforward capacity increase for everyday multitasking and office workloads. The stick uses a standard 260-pin layout and runs at 1.2V without ECC or buffering. Buyers who need higher densities or dual-channel kits should look elsewhere.
The module operates at the DDR4 2133 baseline with CL15 15-15-15 timings and a 1.2V supply. Unbuffered 2Rx8 organisation keeps electrical load light on the memory controller. No heat spreader is fitted, so the laptop's existing thermal solution handles the modest heat output. Systems requiring registered or ECC memory cannot use this part.
The package contains one memory stick backed by a limited lifetime warranty when purchased directly from Computer Memory Solutions. Compatibility is guaranteed for the listed Samsung model, removing guesswork from the upgrade. Product appearance may vary from the reference image. No additional software, cables or mounting hardware are included.
| Brand | Computer Memory Solutions |
|---|---|
| Model | CM10246417000SO |
| Capacity | 8GB |
| Type | 260-Pin DDR4 SO-DIMM |
| Speed | DDR4 2133 (PC4 17000) |
| CAS Latency | CL15 |
| Timing | 15-15-15 |
| Voltage | 1.2V |
| ECC | No |
| Buffered/Registered | Unbuffered |
| Rank | 2Rx8 |
| Chipset | Major Brand Chipset |
| Heat Spreader | No |
| Compatible System | Samsung 5 Series NP530E5M-X02US |
| Package Content | 1 Memory RAM Stick |
Power off the laptop, remove the bottom cover, align the notch on the 260-pin module with the slot key, press firmly until the side clips click, then reattach the cover before booting.
No scheduled maintenance is required; the unbuffered DDR4 module has no moving parts, so replacement is only necessary if a memory error appears or capacity must be increased.
The 8GB capacity ceiling is reached before thermal or voltage limits, causing the system to swap to storage once the working set exceeds the installed memory.
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