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Micron Technology, Inc.

Micron Technology, Inc. MTA36ASF8G72PZ-3G2F1 64GB DDR4 3200 ECC Registered server RAM

SKU CH-TK7R-N16NC MPN MTA36ASF8G72PZ-3G2F1

64GB DDR4 3200 ECC registered server memory, model MTA36ASF8G72PZ-3G2F1, with CL22 timing and 1.20V operation

  • Capacity64GB
  • SpeedDDR4 3200 (PC4 25600)
  • CAS LatencyCL22
  • Timing22-22-22
  • Voltage1.20V
  • ECCYes
  • High 64GB capacity handles heavy virtualization workloads
  • DDR4 3200 speed accelerates data-intensive server tasks
  • ECC registered design protects against data corruption errors
  • CL22 latency supports responsive multi-threaded application performance
  • 20V operation reduces power draw per installed module

64GB DDR4 3200 ECC Registered module

This Micron server memory module provides 64GB of DDR4 capacity at 3200 MT/s with ECC and registered buffering. It targets administrators who need to maximise installed memory in compatible server platforms. The dual-rank 2Rx4 organisation helps increase density per slot. Systems requiring registered ECC DDR4 at this speed can use this module to expand capacity.

1.20V operation and CL22 timing

The module runs at a standard 1.20V with CAS latency 22 and 22-22-22 timings. Registered buffering reduces electrical load on the memory controller, which helps stability in densely populated configurations. ECC circuitry corrects single-bit errors to protect data integrity. Power draw scales with the number of populated slots and the server workload profile.

Sustained throughput in multi-DIMM servers

Under continuous load the registered design maintains signal integrity across multiple ranks per channel. ECC correction operates transparently during extended compute tasks such as virtualisation or database processing. The 3200 MT/s data rate delivers consistent bandwidth when all channels are populated. Thermal behaviour depends on chassis airflow and DIMM spacing in the target server.

Highlights

  • High 64GB capacity handles heavy virtualization workloads
  • DDR4 3200 speed accelerates data-intensive server tasks
  • ECC registered design protects against data corruption errors
  • CL22 latency supports responsive multi-threaded application performance
  • 20V operation reduces power draw per installed module

Specifications

BrandMicron
ModelMTA36ASF8G72PZ-3G2F1
Capacity64GB
SpeedDDR4 3200 (PC4 25600)
CAS LatencyCL22
Timing22-22-22
Voltage1.20V
ECCYes
Buffered/RegisteredRegistered
Rank2Rx4
FeaturesMicron server DRAM - Speed up your servers | Micron Server DRAM increases performance and helps maximize IT budgets.
Speed up applications and get more out of your IT budget with Micron Server DRAM. Maximizing installed memory capacity with Micron Server DRAM is one of the easiest and most affordable ways to make your deployments faster and more efficient.
Speed up server applications
By installing Micron DRAM, you'll be able to maximize the performance capability of your CPUs and optimize your servers' computing potential. Since memory typically functions as a fixed (non-shared) com
Shipping weight0.45 kg
Package size127 × 76 × 25 mm

Questions about this item

How do I install this 2Rx4 registered DDR4 module and what step is often missed?

Align the notch with the DIMM slot key, press firmly until both retention clips click, then verify the BIOS registers the full 64 GB at 3200 MT/s; the step often missed is enabling the registered/ECC profile in BIOS so the module runs at its rated CL22 22-22-22 timings.

What maintenance or replacement will this 1.20 V DDR4 module need over its service life?

No scheduled maintenance is required; keep the server air filters clean so the modules stay within thermal limits, and replace only if a memory test reports uncorrectable ECC errors or the system logs persistent corrected errors.

What limit appears first when this CL22 registered memory runs sustained workloads?

The memory controller’s maximum supported rank count per channel is typically reached before bandwidth or thermal limits, so population rules for 2Rx4 modules restrict how many 64 GB sticks can run at 3200 MT/s simultaneously.

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