OWC 128GB (4x32GB) DDR3L 1600 ECC Registered RDIMM 1R6T34R4128S
- 128GB (4 x 32GB)
- 240-Pin DDR3L ECC R…
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A 128 GB DDR3L 1600 ECC registered RDIMM kit of four 32 GB modules for Supermicro SuperStorage 2027, 6027 and 6037 series servers
Capacity 128GB (4 x 32GB)
This 128GB kit contains four 32GB DDR3L 1600 registered DIMMs built for Supermicro SuperStorage 2027B, 2027R, 6027R, 6037B and 6037R systems. Each module runs at 1.35V with CL11 latency and a 4Rx4 organisation. The 240-pin form factor matches the approved memory slots on those platforms.
The modules provide ECC registered operation required by workstation and server mainboards. They will not work in standard desktop computers that accept only unbuffered memory. Mixing these sticks with unbuffered DIMMs is also unsupported. Buyers needing non-ECC or unbuffered memory for a consumer platform should look elsewhere.
The single specification that determines fit is the registered ECC DDR3L 1600 240-pin design at 1.35V. Only systems qualified for that exact combination can use this kit.
| Brand | OWC |
|---|---|
| Part Number | 1R6T34R4128S |
| Capacity | 128GB (4 x 32GB) |
| Type | 240-Pin DDR3L ECC RDIMM |
| Speed | DDR3L 1600 (PC3L 12800) |
| CAS Latency | CL11 |
| Voltage | 1.35V |
| ECC | Yes |
| Buffered/Registered | Registered |
| Rank | 4Rx4 |
| Heat Spreader | No |
| Compatible System | Supermicro SuperStorage 2027B Series Supermicro SuperStorage 2027R Series Supermicro SuperStorage 6027R Series Supermicro SuperStorage 6037B Series Supermicro SuperStorage 6037R Series |
Other versions of this model
Same family, different memory, cooler or clock — compare before you commit.
Yes, the kit uses 240-pin DDR3L 1600 registered DIMMs, which match the slot and memory type specified for the 6027R series.
Populate the slots following the motherboard's channel sequence — typically slot 1 of each channel first, then slot 2 — and seat each module until the ejector clips click.
Plan replacement once correctable ECC errors become frequent or uncorrectable errors appear, as rising error rates indicate aging DRAM cells.
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