OWC 4R8D54R4128G 128GB DDR5 4800 CL40 4Rx4 288-pin 1.1V ECC Registered RDIMM memory upgrade
- 128GB
- 288-Pin DDR5 ECC RD…
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OWC
128GB DDR5 5600 ECC registered RDIMM for Gigabyte E163-S30, E263-S30, E283-S90, G293-S40 and G293-S41 servers
This 128GB DDR5 5600 CL46 module is built for Gigabyte E163-S30, E263-S30, E283-S90, G293-S40 and G293-S41 platforms. It delivers registered ECC reliability for workstations, servers, NAS units and network switches. The single 4Rx4 DIMM operates at 1.1V and meets JEDEC PC5-44800 standards.
Running at the specified 1.1V, the module draws minimal power for its density and produces low heat without a spreader. Registered buffering reduces electrical load on the memory controller, helping system thermals stay stable during sustained server workloads. Silent operation is assured as the DIMM has no moving parts.
This memory is registered ECC DDR5 and will not work in standard desktop boards or alongside unbuffered or load-reduced DIMMs. Buyers needing consumer DDR5, non-ECC modules or mixed-rank populations must choose a different product. Compatibility is limited to the listed Gigabyte server models.
| Brand | OWC |
|---|---|
| Part Number | 5R6D54R4128G |
| Capacity | 128GB |
| Type | 288-Pin DDR5 ECC RDIMM |
| Speed | DDR5 5600 (PC5 44800) |
| CAS Latency | 46 |
| Voltage | 1.1V |
| ECC | Yes |
| Buffered/Registered | Registered |
| Rank | 4Rx4 |
| Heat Spreader | No |
| Compatible System | Gigabyte E163-S30 Gigabyte E263-S30 Gigabyte E283-S90 Gigabyte G293-S40 Gigabyte G293-S41 |
Other versions of this model
Same family, different memory, cooler or clock — compare before you commit.
Power down, open the chassis, align the module key with the slot, press firmly until both latches click, then verify in BIOS that the 128 GB 4Rx4 module is detected at 5600 MT/s with ECC active.
No scheduled maintenance is required; keep airflow clear of the 288-pin slots and replace the module only if memory diagnostics report uncorrectable ECC errors.
The registered buffer adds one cycle of latency, so memory-controller throughput saturates before the DRAM cells reach thermal limits.
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