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SAMSUNG

SAMSUNG 860 EVO MZ-M6E250BW 250GB mSATA internal SSD

SKU CH-K8NF-1FN01

250 GB mSATA internal SSD with SATA III interface, up to 550 MBps read and 520 MBps write, AES 256-bit encryption, and 1,500,000 hour MTBF

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • InterfaceSATA III
  • ControllerSamsung MJX Controller
  • Max Sequential ReadUp to 550 MBps
  • Max Sequential WriteUp to 520 MBps
  • Up to 550 MBps sequential read for fast boot times
  • Up to 520 MBps sequential write for quick file saves
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • AES 256-bit hardware encryption protects sensitive data
  • 5 million hours MTBF indicates long-term reliability

Purpose and audience

The Samsung 860 EVO MZ-M6E250BW is a 250GB internal SSD built on the SATA interface and the mSATA form factor. It targets users who need solid-state speed in older laptops or compact desktops that lack 2.5-inch bays or M.2 slots. The drive delivers sequential reads up to 550 MBps and writes up to 520 MBps for responsive boot and application loading.

Build integration

The mSATA module measures 50.80mm by 29.97mm by 4.83mm and slots directly into a compatible mSATA socket, requiring no drive cage or cabling. It draws an average 2.2W active and peaks at 4.5W, leaving ample thermal headroom in thin chassis. Trim, S.M.A.R.T. and auto garbage collection maintain performance without user intervention, while AES 256-bit encryption secures data at rest.

Upgrade context

Replacing a mechanical hard drive with this 860 EVO yields random read IOPS up to 97,000 at QD32 and random write IOPS up to 88,000, transforming system responsiveness. The jump is most noticeable on SATA III platforms where the controller can saturate the link; on SATA II hosts the drive still works but caps at the bus limit. A 1,500,000-hour MTBF and 1,500G shock rating suit mobile use.

Highlights

  • Up to 550 MBps sequential read for fast boot times
  • Up to 520 MBps sequential write for quick file saves
  • 97,000 IOPS random read at QD32 for responsive multitasking
  • AES 256-bit hardware encryption protects sensitive data
  • 5 million hours MTBF indicates long-term reliability

Specifications

BrandSAMSUNG
Series860 EVO Series
ModelMZ-M6E250BW
Part NumberMZ-M6E250
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
InterfaceSATA III
ControllerSamsung MJX Controller
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadRandom (QD1): Up to 10,000 IOPS; Random (QD32): Up to 97,000 IOPS
4KB Random WriteRandom (QD1): Up to 42,000 IOPS; Random (QD32): Up to 88,000 IOPS
MTBF1,500,000 hours
FeaturesTrim Support: Yes
AES Encryption: AES 256-bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive)
S.M.A.R.T. Support: Yes
GC (Garbage Collection): Auto Garbage Collection Algorithm
WWN Support: World Wide Name supported
Device Sleep Mode Support: Yes
Software: Magician Software for SSD management
Power Consumption (Active)Average: 2.2W
Maximum: 4.5W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height4.83mm
Width29.97mm
Depth50.80mm
Weight81.65g
Package ContentSSD only ( new - 0 days, 0 hours) in plastivc case, no retail box or other papers

Questions about this item

Will the 250 GB capacity and 520 MBps write speed sustain all-day workloads without hitting a limit?

The drive is rated for up to 520 MBps sequential write and 88,000 IOPS random write at QD32, with a 1,500,000-hour MTBF and AES 256-bit encryption that do not throttle under sustained use.

How much heat and power does the MZ-M6E250BW produce when running continuously?

Average active power is 2.2 W with a 4.5 W burst maximum, and the operating range is 0 °C to 70 °C; the mSATA form factor has no fan, so case airflow handles the heat.

What connector and protocol must the host provide for this mSATA SSD to work?

The host needs a full-size mSATA slot wired for the SATA III interface; the drive uses the Samsung MJX controller and supports TRIM, S.M.A.R.T. and garbage collection automatically.

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