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Green printed circuit board M.2 2280 NVMe SSD with black controller and silver label

SAMSUNG

SAMSUNG 970 PRO 1TB M.2 2280 NVMe internal SSD MZ-V7P1T0E

SKU CH-53SY-QXMZ2 MPN MZ-V7P1T0E

M.2 2280 NVMe SSD with 1 TB capacity, PCIe Gen 3.0 x4 interface, and V-NAND 2-bit MLC memory for sequential reads up to 3500 MB/s and writes up to 2700 MB/s

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsV-NAND 2-bit MLC
  • InterfacePCIe Gen 3.0 x4, NVMe 1.3
  • Up to 3500 MB/s sequential read accelerates large-file workflows
  • Up to 2700 MB/s sequential write sustains heavy write workloads
  • 500,000 IOPS random read at QD32 handles parallel requests
  • 500,000 IOPS random write at QD32 maintains throughput under load
  • 5 million hours MTBF indicates long-term reliability

Built for intensive workloads

The Samsung 970 PRO 1TB M.2 2280 NVMe SSD uses V-NAND 2-bit MLC memory and a Phoenix controller to serve demanding PC and workstation users. Sequential reads reach 3500 MBps and writes reach 2700 MBps over a PCIe Gen 3.0 x4 interface with NVMe 1.3. The 1GB Low Power DDR4 cache helps sustain high random IOPS under heavy queues.

Low idle power and a wide thermal envelope

Idle consumption is 30 mW maximum while active draw averages 5.2W with an 8.5W burst ceiling. The drive is rated for 0°C to 70°C operating temperature and an MTBF of 1,500,000 hours, so it stays stable inside compact enclosures without extra cooling measures.

Drops into any M.2 2280 slot

The single-sided 2280 form factor leaves motherboard space free for other components and needs no cables or drive bays. Compatibility depends on the host providing a PCIe Gen 3.0 x4 NVMe lane; the drive itself adds no mechanical constraints beyond the slot.

Highlights

  • Up to 3500 MB/s sequential read accelerates large-file workflows
  • Up to 2700 MB/s sequential write sustains heavy write workloads
  • 500,000 IOPS random read at QD32 handles parallel requests
  • 500,000 IOPS random write at QD32 maintains throughput under load
  • 5 million hours MTBF indicates long-term reliability

Specifications

BrandSAMSUNG
Series970 PRO
ModelMZ-V7P1T0E
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory ComponentsV-NAND 2-bit MLC
InterfacePCIe Gen 3.0 x4, NVMe 1.3
ControllerSamsung Phoenix
Cache1GB Low Power DDR4 SDRAM
Max Sequential ReadUp to 3500 MBps
Max Sequential WriteUp to 2700 MBps
4KB Random ReadQD32: 500,000 IOPS
QD1: 15,000 IOPS
4KB Random WriteQD32: 500,000 IOPS
QD1: 55,000 IOPS
MTBF1,500,000 hours
FeaturesNon-Volatile Memory Express (NVMe)
970 PRO 1TB NVMe SSDs with a newly enhanced Phoenix controller outperform our previous 960 PRO 1TB model with exceptionally fast sequential read/write speeds up to 3,500/2,700 MB/s and random read/write speeds up to 500/500K IOPS. They also support PCI Express (PCIe) Gen 3 x4 lanes to provide high bandwidth and low latency, making them perfect for business professionals who need cutting edge-performance for high-end computing.
Dynamic Thermal Guard
This feature constantly monitors and works to maintain ideal temperatures to protect the integrity of
Power Consumption (Idle)30 mW (max)
Power Consumption (Active)Average: 5.2W / Maximum: 8.5W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight8.00g
Shipping weight0.08 kg
Package size147 × 97 × 23 mm

Questions about this item

How do I install the 970 PRO into an M.2 2280 slot and what step do people often miss?

Insert the drive at an angle into the PCIe Gen 3.0 x4 M.2 2280 slot, secure it with the motherboard screw, then enable NVMe 1.3 in the BIOS so the drive appears as a boot device.

What maintenance or replacement will the 1TB V-NAND 2-bit MLC drive need later?

No routine maintenance is required; the drive is rated for 1,200 TBW and 1,500,000 hours MTBF, so replacement only occurs if the endurance limit is reached or a hardware fault appears.

What limit appears first during sustained heavy writes on the Phoenix controller with 1GB Low Power DDR4 cache?

The controller will throttle write speeds once the NAND temperature approaches the 70 °C operating ceiling, reducing sustained throughput below the 2,700 MB/s peak.

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