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Green printed circuit board M.2 2280 SSD with black label and gold edge connector

SAMSUNG

SAMSUNG 990 EVO Plus MZ-V9S1T0B 1TB internal SSD

SKU CH-3DNF-NQHYG

1 TB M.2 2280 NVMe SSD delivering 7150 MB/s sequential read, 6300 MB/s write, 850000 IOPS random read and 1350000 IOPS random write with 600 TBW endurance

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • InterfacePCI-Express 4.0 x4 / PCI-Express 5.0 x2
  • ProtocolNVMe 2.0
  • Up to 7,150 MB/s sequential read for faster load times
  • Up to 6,300 MB/s sequential write for quicker saves
  • 850,000 random read IOPS for snappy responsiveness
  • 1,350,000 random write IOPS for smooth multitasking
  • 600 TBW endurance for long-term reliability

990 EVO Plus 1TB PCIe 4.0 x4

The Samsung 990 EVO Plus MZ-V9S1T0B is a 1TB internal solid state drive built for consumer PCs and laptops. It uses the M.2 2280 form factor and connects through a PCI-Express 4.0 x4 or PCI-Express 5.0 x2 interface with NVMe 2.0 protocol. The drive delivers sequential reads up to 7150 MBps and writes up to 6300 MBps for fast system responsiveness.

Intelligent TurboWrite 2.0 and Magician Software

Intelligent TurboWrite 2.0 enlarges the write buffer so large files transfer at peak speed for longer periods. The nickel-coated controller improves power efficiency, drawing 4.3W during reads and 4.2W during writes to limit heat and preserve battery life. Samsung Magician software keeps firmware current and monitors drive health through a single utility.

600TB endurance for heavy workloads

A 600TB total bytes written rating shows the drive can sustain heavy daily writes over its service life. Encryption support covers 256-bit AES, TCG Opal 2.0 and IEEE 1667 standards for data protection. Random performance reaches 850,000 read IOPS and 1,350,000 write IOPS for snappy multitasking.

Highlights

  • Up to 7,150 MB/s sequential read for faster load times
  • Up to 6,300 MB/s sequential write for quicker saves
  • 850,000 random read IOPS for snappy responsiveness
  • 1,350,000 random write IOPS for smooth multitasking
  • 600 TBW endurance for long-term reliability

Specifications

BrandSAMSUNG
Series990 EVO Plus
ModelMZ-V9S1T0B/AM
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
InterfacePCI-Express 4.0 x4 / PCI-Express 5.0 x2
ProtocolNVMe 2.0
EncryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Max Sequential ReadUp to 7150 MBps
Max Sequential WriteUp to 6300 MBps
4KB Random ReadUp to 850,000 IOPS
4KB Random WriteUp to 1,350,000 IOPS
Terabytes Written (TBW)600TB
Power Consumption (Active)4.3W / 4.2W (Read / Write)

Questions about this item

Will this M.2 2280 drive fit in my laptop or desktop motherboard slot?

The drive uses the M.2 2280 form factor, so it fits any standard M.2 slot keyed for 2280-length NVMe modules.

My board only supports PCIe 4.0 — will the drive still run at full speed?

The drive operates on PCIe 4.0 x4 and PCIe 5.0 x2, so on a 4.0 board it will run at up to 7150 MB/s read and 6300 MB/s write.

Does the 600 TBW rating cover heavy daily workloads like video editing?

With 600 TB of total bytes written endurance, the drive is rated for sustained heavy write workloads such as video editing and large project files.

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