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SAMSUNG

SAMSUNG BM9C1 2TB M.2 2230 PCIe 4.0 x4 NVMe internal SSD

SKU CH-8P24-CZ1K2

Compact M.2 2230 NVMe drive delivering 2 TB of storage with sequential speeds up to 4600 MB/s read and 2600 MB/s write

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2230
  • Capacity2TB
  • InterfacePCI-Express 4.0 x4
  • Max Sequential ReadUp to 4600 MBps
  • 2 TB capacity fits large libraries in a compact M.2 2230 module
  • PCIe 4.0 x4 interface delivers up to 4600 MB/s sequential read speed
  • Up to 2600 MB/s sequential write accelerates large file transfers
  • 320,000 IOPS random read keeps multitasking responsive
  • 580,000 IOPS random write handles heavy write workloads efficiently

Compact 2TB M.2 2230 NVMe drive

This Samsung BM9C1 drive fits the M.2 2230 slot found in many ultraportables and handheld PCs. It connects over PCIe 4.0 x4 and uses NVMe to deliver up to 4600 MBps sequential read and 2600 MBps sequential write. The 2TB capacity suits users who need more local storage for games, media and project files.

QLC 3D NAND changes endurance profile

The drive uses QLC 3D NAND, which increases density but reduces write endurance compared with TLC. Everyday workloads such as game installs, media libraries and document syncs remain well within the rated random performance of 320000 read IOPS and 580000 write IOPS. Sustained heavy write workloads will reach the media limits sooner than TLC alternatives.

2TB headroom for games and creative work

At 2TB the drive holds dozens of modern titles or large video projects without constant juggling. Random read of 320000 IOPS keeps level loads snappy, while the 2600 MBps sequential write ceiling means large file copies finish quickly. Very long sequential writes or constant high-queue workloads will eventually throttle as the SLC cache fills.

Highlights

  • 2 TB capacity fits large libraries in a compact M.2 2230 module
  • PCIe 4.0 x4 interface delivers up to 4600 MB/s sequential read speed
  • Up to 2600 MB/s sequential write accelerates large file transfers
  • 320,000 IOPS random read keeps multitasking responsive
  • 580,000 IOPS random write handles heavy write workloads efficiently

Specifications

BrandSAMSUNG
SeriesBM9C1
ModelMZ-9MX2T0A
Part NumberMZ9MX2T0HCL1-00BD1
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2230
Capacity2TB
InterfacePCI-Express 4.0 x4
Max Sequential ReadUp to 4600 MBps
Max Sequential WriteUp to 2600 MBps
4KB Random ReadUp to 320,000 IOPS
4KB Random WriteUp to 580,000 IOPS

Questions about this item

How long will the QLC 3D NAND in this 2 TB BM9C1 last before I need to replace it?

Samsung rates the drive for up to 4600 MB/s reads and 2600 MB/s writes, and the QLC 3D NAND is built to handle typical consumer workloads for the usable life of a laptop or handheld.

What limit appears first when I push sustained writes on the PCIe 4.0 x4 interface?

Sequential write speed tops out at 2600 MB/s, so the controller will throttle once that ceiling is reached during long transfers.

How hot or loud does the M.2 2230 module get when it runs all day in a Steam Deck?

The drive has no moving parts and draws power only through the PCIe 4.0 x4 slot, so it stays silent and runs at normal SSD temperatures under continuous use.

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