Intel DC S3610 SSDSC2BX016T401 1.6TB 2.5" SATA enterprise SSD
- 2.5"
- 1.6TB
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SAMSUNG
A 2.5 inch SATA internal SSD with 256GB capacity, V-NAND 2-bit MLC memory, 512MB LPDDR4 cache, sequential reads up to 560 MBps, writes up to 530 MBps, and 1.5 million hour MTBF
The Samsung 860 PRO MZ-76P256E is a 256GB 2.5" internal SSD built for high-end PCs, workstations and NAS units. It uses V-NAND 2-bit MLC memory and a Samsung MJX controller to deliver sustained performance for heavy workloads such as 4K video storage and 3D data rendering.
The drive connects through a SATA III interface with a 600 MBps bus ceiling, so sequential reads top out at 560 MBps and writes at 530 MBps. Random 4KB performance reaches 100,000 IOPS read and 90,000 IOPS write at QD32, while QD1 figures sit at 11,000 IOPS read and 43,000 IOPS write.
A 1,500,000-hour MTBF and V-NAND 64-layer construction give the drive the endurance needed for continuous high-intensity use. AES-256 hardware encryption and Samsung Magician software support are included for data security and management.
| Brand | SAMSUNG |
|---|---|
| Series | 860 Pro Series |
| Model | MZ-76P256E |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | 2.5" |
| Capacity | 256GB |
| Memory Components | V-NAND 2-bit MLC |
| Interface | SATA III |
| Controller | Samsung MJX |
| Cache | 512MB LPDDR4 |
| Max Sequential Read | Up to 560 MBps |
| Max Sequential Write | Up to 530 MBps |
| 4KB Random Read | Random (QD1): Up to 11,000 IOPS Random (QD32): Up to 100,000 IOPS |
| 4KB Random Write | Random (QD1): Up to 43,000 IOPS Random (QD32): Up to 90,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Samsung V-NAND Technology Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint. Fast Read/Write Performance The 860 PRO performs at sequential write speeds up to 530 MB/s and sequential read speeds up to 560 MB/s with a robust a robust algorithm-based Samsung MJX controller (up to 1 GHz). Relentless Endurance With an industry warranty offering up |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 7.00mm |
| Width | 69.85mm |
| Depth | 100.00mm |
| Weight | 86.18g |
| Shipping weight | 0.09 kg |
| Package size | 142 × 97 × 23 mm |
The 256 GB version provides up to 560 MB/s sequential read and 530 MB/s write with a 512 MB LPDDR4 cache, while higher capacities in the same series can reach up to 90,000 random write IOPS at QD32 compared to 43,000 IOPS here.
Those are maximum sequential rates over the SATA 600 interface; real-world throughput will be slightly lower due to protocol overhead and system configuration, but large file transfers will still approach the SATA link limit.
SATA III tops out at 600 MB/s, so the drive's 560 MB/s read and 530 MB/s write speeds run near the interface ceiling; the bottleneck is the SATA link itself, not the controller or V-NAND.
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