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Small rectangular green circuit board M.2 2280 SSD with black chips and gold edge connector

SAMSUNG

SAMSUNG 850 EVO M.2 2280 250GB SATA internal SSD MZ-N5E250BW

SKU CH-CXEN-DDP26 MPN MZ-N5E250BW

A 250 GB SATA M.2 2280 internal SSD with 3D NAND, 512 MB DRAM cache, up to 540 MBps sequential read and 500 MBps sequential write

  • Device TypeInternal SSD Single Unit Version
  • Form FactorM.2 2280
  • Capacity250GB
  • Memory Components3D NAND
  • InterfaceSATA III
  • ControllerMGX

Options 250GB

  • Up to 540 MB/s sequential read speed accelerates boot and app launch
  • Up to 500 MB/s sequential write speed shortens file saves and installs
  • 97,000 IOPS random read at QD32 keeps multitasking responsive
  • 3D V-NAND with 512 MB DRAM cache enhances endurance and reliability
  • M.2 2280 form factor fits ultra-thin laptops and compact PCs

What this drive is and who it suits

The Samsung 850 EVO M.2 2280 is a 250GB internal SSD built on 3D V-NAND with a SATA interface. It fits ultra-thin laptops and compact desktops that accept the M.2 2280 form factor. The MGX controller and 512MB DRAM cache deliver sequential speeds up to 540 MBps read and 500 MBps write. Random performance reaches 97,000 IOPS read and 89,000 IOPS write at queue depth 32.

What to verify before ordering

Confirm your system has an M.2 slot keyed for SATA signalling and that the 2280 length is supported. The drive is 2.30mm high and 22.00mm wide, so check clearance around the slot. Operating temperature range is 0°C to 70°C and idle power is 50 mW. Samsung supplies Data Migration and Magician software for cloning and management.

Upgrade path and when it makes sense

This SSD replaces a 2.5-inch SATA drive or an older M.2 SATA module with higher capacity and 3D NAND endurance. The jump is worth it when moving from a hard drive or a planar NAND SSD to gain faster boot, lower active power averaging 2.4W and shock resistance rated at 1500G.

Pontos fortes

  • Up to 540 MB/s sequential read speed accelerates boot and app launch
  • Up to 500 MB/s sequential write speed shortens file saves and installs
  • 97,000 IOPS random read at QD32 keeps multitasking responsive
  • 3D V-NAND with 512 MB DRAM cache enhances endurance and reliability
  • M.2 2280 form factor fits ultra-thin laptops and compact PCs

Especificações

BrandSAMSUNG
Series850 EVO
ModelMZ-N5E250BW
Device TypeInternal SSD Single Unit Version
Form FactorM.2 2280
Capacity250GB
Memory Components3D NAND
InterfaceSATA III
ControllerMGX
Cache512MB DRAM
Max Sequential ReadUp to 540 MBps
Max Sequential WriteUp to 500 MBps
4KB Random ReadUp to 97,000 IOPS (4KB, QD32)
Up to 10,000 IOPS (4KB, QD1)
4KB Random WriteUp to 89,000 IOPS (4KB, QD32)
Up to 40,000 IOPS (4KB, QD1)
Power Consumption (Idle)50 mW
Power Consumption (Active)Average: 2.4W
Maximum: 3.7W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1500G & 0.5ms (Half sine)
Height2.30mm
Width22.00mm
Depth80.00mm
Weight0.09 lb.
Peso de envio0.09 kg
Dimensões da embalagem140 × 102 × 25 mm

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Perguntas sobre este artigo

Does the single-unit version include a mounting screw or do I need to supply my own?

The single-unit version contains only the 250 GB M.2 2280 drive; the mounting screw is not included and must be sourced from the laptop or motherboard kit.

The 850 EVO range has several capacities — why choose the 250 GB model?

The 250 GB model delivers the same 540 MBps read and 500 MBps write speeds as larger capacities while keeping cost lower for OS and core applications.

In a real laptop the box says up to 540 MBps — what sustained throughput should I expect?

Sequential reads reach up to 540 MBps and writes up to 500 MBps over SATA III; random 4 KB reads hit 97,000 IOPS at QD32 and writes 89,000 IOPS at QD32.

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