Aceitamos criptomoeda — para que as moedas que detém possam comprar material informático real.Pague em cripto, gaste-a em material informático real. Envio seguro gratuito para todo o mundo acima de 399 $. Caixas neutras, sem marca, expedidas a partir da Alemanha.Envio seguro gratuito acima de 399 $. A sua taxa fica bloqueada durante 30 minutos assim que abre a finalização da compra.Taxa bloqueada 30 minutos. Cada artigo é selado, o seu número de série é verificado, e está coberto por uma garantia de 24 meses.Selado, garantido 24 meses.

Artigos guardados Iniciar sessão
Green rectangular DDR4 SO-DIMM module with black memory chips and gold edge connector

SAMSUNG

Samsung 8GB DDR4-2666 SO-DIMM CL19 1.2V 260-Pin M471A1K43DB1-CTD

SKU CH-YZYQ-N8CNX

Adds 8 GB of DDR4-2666 laptop memory with CL19 timing and 1.2 V operation

  • Capacity8GB
  • Type260-Pin DDR4 SO-DIMM
  • SpeedDDR4 2666 (PC4 21300)
  • CAS LatencyCL19
  • Timing19-19-19
  • Voltage1.20V
  • 8 GB capacity adds responsive multitasking headroom
  • DDR4-2666 speed delivers 21300 MB/s peak bandwidth
  • CL19 19-19-19 timings keep latency predictable
  • 2 V operation reduces power draw and heat
  • 260-pin SO-DIMM fits standard laptop memory slots

8GB DDR4-2666 SO-DIMM for laptop upgrades

This Samsung module delivers 8 GB of DDR4 memory at 2666 MT/s with CL19 timings. It uses the standard 260-pin SO-DIMM form factor and operates at 1.20 V. The stick is unbuffered and non-ECC, making it a direct fit for compatible laptop slots.

Suits owners adding a single 8 GB stick to a DDR4

The module works in systems that accept 260-pin DDR4 SO-DIMMs at 1.20 V without ECC or registered buffers. Buyers needing ECC error correction or registered signal buffering should look at something else. Systems that require a different pin count or voltage are also not a match.

260-pin DDR4 SO-DIMM form factor decides fit

The 260-pin layout and DDR4 signalling are the single specification that determines whether this module installs in a given laptop. If the machine uses a different pin count or memory generation the part will not seat or function.

Pontos fortes

  • 8 GB capacity adds responsive multitasking headroom
  • DDR4-2666 speed delivers 21300 MB/s peak bandwidth
  • CL19 19-19-19 timings keep latency predictable
  • 2 V operation reduces power draw and heat
  • 260-pin SO-DIMM fits standard laptop memory slots

Especificações

BrandSamsung
Capacity8GB
Type260-Pin DDR4 SO-DIMM
SpeedDDR4 2666 (PC4 21300)
CAS LatencyCL19
Timing19-19-19
Voltage1.20V
ECCNo
Buffered/RegisteredUnbuffered / Unregistered

Perguntas sobre este artigo

What is the maximum voltage the Samsung 8GB DDR4-2666 SO-DIMM draws under sustained load?

The module runs at 1.20V, the standard operating voltage for DDR4, so power draw stays at that level even during continuous use.

How much heat does the CL19 1Rx8 module produce when running all day in a laptop?

At 1.2V and 2666 MT/s the unbuffered SO-DIMM generates only modest warmth; no active cooling is required beyond the laptop's normal airflow.

Which slot type must the laptop provide for this 260-pin DDR4 SO-DIMM to work?

It needs a 260-pin DDR4 SO-DIMM socket; the key notch position matches the DDR4 standard.

Também nesta secção

Os clientes também compararam

Mesma prateleira, mesma finalização da compra — oito moedas e uma taxa bloqueada durante 30 minutos.