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Two green laptop memory modules with gold contacts on a light background

Crucial

Crucial CT2K8G4SFRA266 16GB (2x8GB) DDR4 2666 laptop RAM

SKU CH-03AQ-7GNPD MPN CT2K8G4SFRA266

Adds 16 GB of DDR4 memory across two 8 GB SO-DIMM modules running at 2666 MT/s with CL19 timing and 1.2 V operation

  • Capacity16GB (2 x 8GB)
  • Type260-Pin DDR4 SO-DIMM
  • SpeedDDR4 2666 (PC4 21300)
  • CAS LatencyCL19
  • Timing19-19-19
  • Voltage1.20V

Capacity 16GB (2 x 8GB)

Speed DDR4 2666 (PC4 21300)

CAS Latency CL19

  • 16GB dual-channel kit doubles capacity for multitasking
  • 2666 MT/s DDR4 speed raises bandwidth by up to 30%
  • CL19 timing delivers faster burst access for sequential data
  • 20V operation cuts power draw by up to 40%
  • 260-pin SO-DIMM fits standard laptop DDR4 slots

16GB DDR4 SO-DIMM kit

This kit provides 16GB of DDR4 laptop memory in two 8GB modules. It uses the 260-pin SO-DIMM form factor and runs at 2666 MT/s with CL19 timing. The unbuffered, non-ECC design suits standard notebook upgrades.

1.20V operation reduces power draw

Operating at 1.20V, the modules are rated to lower power consumption by up to 40% compared with earlier DDR generations. This voltage level helps extend battery life during normal workloads. No active cooling is required for typical laptop use.

Optimised for next generation platforms

The memory is optimised for next generation processors and platforms, delivering faster burst access speeds for improved sequential data throughput. Bandwidth increases of up to 30% support responsive multitasking. No additional software or accessories are included.

商品特色

  • 16GB dual-channel kit doubles capacity for multitasking
  • 2666 MT/s DDR4 speed raises bandwidth by up to 30%
  • CL19 timing delivers faster burst access for sequential data
  • 20V operation cuts power draw by up to 40%
  • 260-pin SO-DIMM fits standard laptop DDR4 slots

商品規格

BrandCrucial
ModelCT2K8G4SFRA266
Capacity16GB (2 x 8GB)
Type260-Pin DDR4 SO-DIMM
SpeedDDR4 2666 (PC4 21300)
CAS LatencyCL19
Timing19-19-19
Voltage1.20V
ECCNo
Buffered/RegisteredUnbuffered
FeaturesSpeeds up to 2666 MT/s and faster data rates are expected to be available as DDR4 technology matures
Increase bandwidth by up to 30%
Reduce power consumption by up to 40% and extend battery life
Faster burst access speeds for improved sequential data throughout
Optimized for next generation processors and platforms
出貨重量0.03 kg
包裝尺寸91 × 80 × 6 mm

其他版本

同系列還有 5 款

同系列產品，記憶體、散熱器或時脈不同 — 下單前請先比較。

商品問答

How do I install the 260-pin DDR4 SO-DIMM modules and what step is often missed?

Align the notch on each 8GB module with the slot key, insert at an angle, then press down firmly until both side clips click. The step often missed is pressing until both clips engage fully.

What maintenance or replacement will this 16GB kit need later?

No scheduled maintenance is required. If a module fails, replace the faulty 8GB SO-DIMM with another DDR4 2666 CL19 1.20V unbuffered unit to keep timing matched.

What limit appears first under sustained heavy workloads?

The CL19 latency at 2666 MT/s sets the throughput ceiling. Extended loads are limited by this timing and the fixed 1.20V voltage, not by thermal throttling.

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