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Green printed circuit board with gold edge connector and black controller chip, M.2 2280 form factor

MSI

MSI SPATIUM M450 PCIe 4.0 NVMe M.2 500GB internal SSD

SKU CH-Q54D-CEMVR MPN SPATIUM M450 PCIe 4.0 NVMe M.2 500GB

PCIe 4.0 x4 NVMe 500 GB drive with up to 3600 MB/s read, 2300 MB/s write, 300 TBW and TCG Pyrite encryption

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity500GB
  • Memory Components3D NAND
  • InterfacePCI-Express 4.0 x4, NVMe 1.4

Style Without Heatsink

Options 500GB M450

  • Sequential reads up to 3600 MB/s accelerate game loading
  • Sequential writes up to 2300 MB/s speed up large file transfers
  • 300 TBW endurance rating supports heavy daily workloads
  • TCG Pyrite encryption protects stored data from unauthorised access
  • LDPC error correction and end-to-end data path protection maintain data integrity

Designed for fast storage

The MSI SPATIUM M450 is a 500GB internal SSD built for consumers who need responsive storage in a compact M.2 2280 form factor. It uses 3D NAND flash and a PHISON E19T controller to deliver PCIe 4.0 x4 bandwidth with NVMe 1.4 protocol support. The drive suits desktops and notebooks that require quick boot times and rapid file access.

Runs cool and quiet in daily use

With no moving parts the SSD operates silently and draws little power during typical workloads. LDPC error correction and end-to-end data path protection maintain data integrity without adding thermal load. TCG Pyrite encryption secures information while TRIM support keeps performance consistent over time.

Sustained workloads stay within rated limits

Sequential reads reach up to 3600 MBps and writes up to 2300 MBps, while random performance hits 300,000 read IOPS and 550,000 write IOPS. The 300 TBW endurance rating and 1,500,000 hour MTBF indicate the drive can handle prolonged write activity without exceeding its design limits. MSI Center software monitors health metrics during extended sessions.

商品特色

  • Sequential reads up to 3600 MB/s accelerate game loading
  • Sequential writes up to 2300 MB/s speed up large file transfers
  • 300 TBW endurance rating supports heavy daily workloads
  • TCG Pyrite encryption protects stored data from unauthorised access
  • LDPC error correction and end-to-end data path protection maintain data integrity

商品規格

BrandMSI
SeriesSPATIUM Series
ModelM450
Part NumberSM450N500
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity500GB
Memory Components3D NAND
InterfacePCI-Express 4.0 x4, NVMe 1.4
ProtocolNVMe 1.4
ControllerPHISON E19T
EncryptionTCG Pyrite (Encryption, Data Security)
Max Sequential ReadUp to 3600 MBps
Max Sequential WriteUp to 2300 MBps
4KB Random ReadUp to 300,000 IOPS
4KB Random WriteUp to 550,000 IOPS
Terabytes Written (TBW)300TB
MTBF1,500,000 hours
FeaturesTRIM (Performance Optimization, OS support required)
SMART (Self-Monitoring, Analysis and Reporting Technology)
LDPC (Low Density Parity Check) ECC Algorithm
End to End Data Path Protection
APST (Autonomous Power State Transition)
TCG Pyrite (Encryption, Data Security)
Power Consumption (Idle)40 mW
Power Consumption (Active)3.4W
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Height2.15mm
Width22.00mm
Depth80.00mm
出貨重量0.05 kg
包裝尺寸159 × 81 × 20 mm

其他版本

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商品問答

How do I install the M.2 2280 SPATIUM M450 and what step is often missed?

Insert the drive into a PCIe 4.0 x4 M.2 slot at a 30‑degree angle, press down and secure with the motherboard screw; the step often missed is enabling NVMe 1.4 in BIOS so the controller runs at full 3600 MB/s read speed.

What maintenance or replacement will the 500 GB M450 need later?

The drive has 300 TBW endurance and 1.5 million‑hour MTBF; no user maintenance is required, but once written data approaches 300 TB the NAND may wear out and the SSD should be replaced.

What limit appears first during sustained writes on this 500 GB model?

Sequential write speed is rated up to 2300 MB/s; under heavy continuous workloads the SLC cache fills and throughput drops toward the native 3D NAND write rate, which becomes the first bottleneck.

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