BFKK 3U Rackmount Server Chassis EATX/ATX/MATX 4x5.25 6x3.5 Top/Side Cooling
- Rackmount
NEMIX RAM
A 16 GB DDR4 ECC SODIMM running at 2933 MHz with CL21 latency, 2Rx8 organisation and 1.2 V operation for compatible Samsung systems
This 16GB DDR4 2933 ECC SODIMM is built for Samsung servers, workstations and all-in-one PCs that require unbuffered error-correcting memory. It delivers 16GB of capacity in a single 260-pin module rated at PC4-23400 with CL21 latency.
The module runs at 1.20V and uses Samsung, Micron or Hynix DRAM in a 2Rx8 organisation. With no heat spreader fitted, it relies on system airflow and the low voltage to maintain stable temperatures during typical workloads.
Installation is a straightforward slot-in upgrade for supported Samsung devices. The unbuffered ECC design works with motherboards that accept DDR4 ECC SODIMMs, freeing a second slot for future expansion while keeping the memory subsystem simple.
| Brand | NEMIX RAM |
|---|---|
| Series | Samsung Server/Workstation Compatible Series Memory |
| Model | Samsung DDR4 2933MHZ ECC Unbuffered SODIMM |
| Part Number | MSE23400-628K1 |
| Capacity | 16GB |
| Speed | DDR4 2933 (PC4 23400) |
| ECC | Yes |
| Buffered/Registered | Unbuffered |
| Chipset | Major OEM Samsung, Micron, Hynix |
| Voltage | 1.20V |
| Compatible System | Samsung |
| CAS Latency | CL21 |
| Heat Spreader | No |
| Type | 260-PIN DDR4 ECC SODIMM |
| Rank | 2Rx8 |
| Features | DDR4 ECC Unbuffered SODIMM Motherboard Compatible |
| Package Content | 16GB (1X16GB) DDR4 2933MHZ PC4-23400 2Rx8 1.2V CL21 260-PIN ECC Unbuffered SODIMM |
Align the notch on the module with the slot key, insert at an angle, then press down firmly until both side clips snap shut; the step often missed is fully seating both clips so the ECC module makes complete contact.
No routine maintenance is required; replacement is only necessary if a memory test reports correctable errors that exceed the system threshold or if a DIMM fails completely.
The thermal limit of the unbuffered Samsung chips typically appears first, causing the memory controller to throttle frequency before voltage or timing constraints are reached.
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