SAMSUNG 850 EVO MZ-M5E120BW 120GB mSATA internal SSD
- Internal SSD Single…
- mSATA
SAMSUNG
mSATA internal SSD with 500 GB capacity, 540 MB/s read and 520 MB/s write speeds using 3D NAND and SATA III interface
The Samsung 850 EVO mSATA 500GB is an internal solid-state drive built for consumer laptops and ultra-thin PCs that require the mSATA form factor. It uses 3D V-NAND memory and a SATA III interface to deliver reliable storage in a compact design.
With no moving parts, the drive operates silently and produces negligible heat during typical workloads. Idle power draw is 50mW, rising to 3.5W during read activity and 4.3W during write activity.
Under continuous operation the MGX controller maintains sequential speeds of up to 540 MBps read and 520 MBps write. Random performance reaches 97,000 IOPS read and 88,000 IOPS write, while 3D V-NAND technology supports enhanced endurance for heavy daily use.
| Brand | SAMSUNG |
|---|---|
| Series | 850 EVO |
| Model | MZ-M5E500BW |
| Device Type | Internal SSD Single Unit Version |
| Used For | Consumer |
| Form Factor | mSATA |
| Capacity | 500GB |
| Memory Components | 3D NAND |
| Interface | SATA III |
| Controller | MGX |
| Max Sequential Read | Up to 540 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | Up to 97,000 IOPS |
| 4KB Random Write | Up to 88,000 IOPS |
| Features | Dara Migration Software: Yes |
| Power Consumption (Idle) | 50mW |
| Power Consumption (Active) | Read: 3.5W Write: 4.3W |
| Height | 4.90mm |
| Width | 29.90mm |
| Depth | 50.80mm |
| Weight | 0.02 lb. |
| 出貨重量 | 0.07 kg |
| 包裝尺寸 | 142 × 99 × 23 mm |
其他版本
同系列產品,記憶體、散熱器或時脈不同 — 下單前請先比較。
Insert the drive at an angle into the mSATA slot, press it down flat, and secure it with the retention screw; the step often missed is fastening that screw, which prevents the drive from lifting and losing contact.
No mechanical maintenance is required; the drive relies on the MGX controller and Samsung Magician software to manage wear levelling and firmware updates, so replacement only occurs if the NAND reaches its write endurance limit.
The sequential write ceiling of 520 MBps is reached before the 4.3 W active power draw or thermal limits become a bottleneck.
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