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SAMSUNG

SAMSUNG 850 EVO MZ-75E500E 500GB SATA internal SSD

SKU CH-3J58-ZAHV3

2.5-inch SATA solid-state drive with 500GB capacity, V-NAND memory and 512MB DRAM cache reaching 540MB/s read and 520MB/s write speeds

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form Factor2.5"
  • Capacity500GB
  • Memory ComponentsV-NAND 3bit MLC
  • InterfaceSATA III
  • Up to 540 MB/s sequential read speeds with SATA III interface
  • Up to 520 MB/s sequential write speeds with Samsung MGX controller
  • 98,000 IOPS random read performance at queue depth 32
  • 5 million hours MTBF for long-term reliability
  • 256-bit encryption standard protects stored data

Capacity and audience

This 500GB SATA internal SSD targets consumer workloads such as OS boot, application loading and everyday file storage. The 2.5 inch form factor fits standard laptop and desktop bays. V-NAND 3bit MLC memory and a Samsung MGX controller with 512MB DRAM cache handle mixed read and write traffic.

Sustained write behaviour

Sequential write reaches 520 MBps and 4KB random write hits 90,000 IOPS at queue depth 32. At low queue depth the drive still delivers 40,000 IOPS, so performance remains steady during extended copy jobs or background updates. The controller manages write amplification to keep throughput consistent over long sessions.

Thermals noise and power

Idle draw is 70mW while active use averages 3.1W with a 3.6W peak. The drive operates from 0°C to 70°C and survives storage from -40°C to 85°C. With no moving parts it produces no acoustic noise, making it suitable for quiet systems and mobile devices.

商品特色

  • Up to 540 MB/s sequential read speeds with SATA III interface
  • Up to 520 MB/s sequential write speeds with Samsung MGX controller
  • 98,000 IOPS random read performance at queue depth 32
  • 5 million hours MTBF for long-term reliability
  • 256-bit encryption standard protects stored data

商品規格

BrandSAMSUNG
Series850 EVO
ModelMZ-75E500E
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form Factor2.5"
Capacity500GB
Memory ComponentsV-NAND 3bit MLC
InterfaceSATA III
ControllerSamsung MGX Controller
Cache512MB DRAM
Max Sequential ReadUp to 540 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadUp to 98,000 IOPS (4KB, QD32)
Up to 10,000 IOPS (4KB, QD1)
4KB Random WriteUp to 90,000 IOPS (4KB, QD32)
Up to 40,000 IOPS (4KB, QD1)
MTBF1,500,000 hours
Power Consumption (Idle)70mW
Power Consumption (Active)3.1W/3.6W (Average/Max)
Operating Temperature0°C ~ +70°C
Storage Temperature-40°C ~ +85°C
Operating Humidity5% to 95% RH
Max Shock Resistance1500G, Duration 0.5m Sec, 3 Axis
Max Vibration Resistance20~2000Hz, 20G
Height6.80mm
Width69.85mm
Depth100.00mm
Weight0.12 lb.

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