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A small green printed circuit board with black chips and a gold edge connector, M.2 2280 form factor

SAMSUNG

SAMSUNG 970 EVO PLUS MZ-V7S250BW 250GB internal SSD

SKU CH-EYAK-ZP4T1

M.2 2280 250GB NVMe SSD delivering 3500 MB/s reads and 2300 MB/s writes with 512MB DDR4 cache

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity250GB
  • Memory ComponentsV-NAND 3-bit MLC
  • InterfacePCIe Gen 3.0 x4, NVMe 1.3
  • Sequential reads up to 3500 MBps accelerate large-file workflows
  • Sequential writes up to 2300 MBps speed up content creation
  • Random reads up to 250000 IOPS at QD32 boost multitasking responsiveness
  • Random writes up to 550000 IOPS at QD32 handle heavy write workloads
  • 150 TBW endurance rating supports sustained daily use

Samsung 970 EVO Plus 250GB NVMe SSD

The Samsung 970 EVO Plus MZ-V7S250BW is a 250GB internal solid state drive built for consumer desktops and laptops. It uses V-NAND 3-bit MLC memory and a Samsung Phoenix controller to deliver NVMe performance over a PCIe Gen 3.0 x4 interface.

M.2 2280 form factor with PCIe Gen 3.0 x4

The drive fits a standard M.2 2280 slot wired for PCIe Gen 3.0 x4 lanes. A 512MB Low Power DDR4 SDRAM cache buffers write bursts. Idle power draw is a maximum of 30 mW, while active consumption averages 5W with an 8W burst ceiling, keeping thermal load modest for compact builds.

250GB capacity with 150 TBW endurance

Sequential reads reach up to 3500 MBps and writes up to 2300 MBps. Random 4KB performance hits 250,000 IOPS read and 550,000 IOPS write at QD32, dropping to 17,000 and 60,000 IOPS at QD1. The 150 TBW rating and 1,500,000-hour MTBF define the write endurance and reliability envelope for this capacity.

商品特色

  • Sequential reads up to 3500 MBps accelerate large-file workflows
  • Sequential writes up to 2300 MBps speed up content creation
  • Random reads up to 250000 IOPS at QD32 boost multitasking responsiveness
  • Random writes up to 550000 IOPS at QD32 handle heavy write workloads
  • 150 TBW endurance rating supports sustained daily use

商品規格

BrandSAMSUNG
Series970 EVO PLUS
ModelMZ-V7S250BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity250GB
Memory ComponentsV-NAND 3-bit MLC
InterfacePCIe Gen 3.0 x4, NVMe 1.3
ControllerSamsung Phoenix
CacheSamsung 512MB Low Power DDR4 SDRAM
Max Sequential ReadUp to 3500 MBps
Max Sequential WriteUp to 2300 MBps
4KB Random ReadQD32: Up to 250,000 IOPS
QD1: Up to 17,000 IOPS
4KB Random WriteQD32: Up to 550,000 IOPS
QD1: Up to 60,000 IOPS
MTBF1,500,000 hours
FeaturesReliability: 150 TBW
Always Evolving SSD
The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimization. It maximizes the potential of NVMe bandwidth for unbeatable computing.
Level up Performance
The 970 EVO Plus reaches sequential read/write speeds up to 3,500/2,300 MB/s, up to 53% faster than the 970 EVO. Powered by the latest V-NAND technology - which brings greater NAND performance and higher power efficiency - along with optimized firmware, a proven Phoenix controller, and Intelligent TurboWr
Power Consumption (Idle)Max. 30 mW
Power Consumption (Active)Average: 5W
Maximum: 8W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height2.38mm
Width22.15mm
Depth80.15mm
Weight8.00g

商品問答

How long can the 970 EVO Plus sustain its 3500 MB/s read speed before thermal throttling begins?

The controller and V-NAND are rated to operate up to 70 °C; sustained full-speed reads will throttle once the drive reaches that temperature.

What are the noise, heat and power characteristics when the SSD runs all day?

The drive has no moving parts so it is silent; active power averages 5 W with an 8 W burst ceiling, and the operating range tops out at 70 °C.

What motherboard slot and protocol are required for this M.2 2280 NVMe drive to work?

A motherboard with an M.2 2280 slot wired for PCIe 3.0 x4 and NVMe 1.3 support is required.

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