SanDisk Optimus GX PRO 8100 1TB internal SSD SDSP82100TAH-000E0
- Internal Solid Stat…
- M.2 2280
SanDisk
PCIe 5.0 x4 NVMe 2.0 drive delivering 14,900 MB/s reads and 11,000 MB/s writes with 600 TBW endurance
Option 1TB
The SanDisk Optimus GX PRO 8100 is a 1 TB internal SSD built for professionals, creators and gamers who need PCIe 5.0 x4 NVMe 2.0 bandwidth. 3D NAND TLC flash and the nCache 4.0 layer deliver sequential reads up to 14900 MBps and writes up to 11000 MBps. Random performance reaches 1600000 read IOPS and 2400000 write IOPS for responsive AI workloads and large game libraries.
Moving from a PCIe 4.0 drive yields more than double the power efficiency at 6.2 W active read and 6.1 W active write. The 600 TBW endurance rating and 1750000 hour MTBF make the jump worthwhile for sustained write intensive tasks such as video editing or model training. The M.2 2280-S3-M form factor fits existing slots without a heatsink.
Without a heatsink the controller manages thermals up to the 85 °C operating limit, so extended sessions throttle later than on Gen 4 designs. Idle power stays at 5 mW, keeping laptop battery drain low during background workloads. The 5.0 interface maintains consistent throughput across long transfers rather than peaking only in short bursts.
| Brand | SanDisk |
|---|---|
| Series | Optimus GX PRO 8100 |
| Model | SDSP82100TAN-000E0 |
| Device Type | Internal Solid State Drive (SSD) |
| Form Factor | M.2 2280-S3-M |
| Capacity | 1TB |
| Memory Components | 3D NAND TLC |
| Interface | PCI-Express 5.0 x4 |
| Protocol | NVMe 2.0 |
| Max Sequential Read | Up to 14900 MBps |
| Max Sequential Write | Up to 11000 MBps |
| 4KB Random Read | Up to 1,600,000 IOPS |
| 4KB Random Write | Up to 2,400,000 IOPS |
| Terabytes Written (TBW) | 600TB |
| MTBF | 1,750,000 hours |
| HeatSink | without HeatSink |
| Power Consumption (Idle) | 5 mW |
| Power Consumption (Active) | Average Active Power Read: 6.2W Average Active Power Write: 6.1W |
| Operating Temperature | 0°C ~ +85°C |
| Storage Temperature | -40°C ~ +85°C |
| Max Shock Resistance | 1,500G @ 0.5 ms half-sine |
| Max Vibration Resistance | Operating Vibration: 5 gRMS, 10-2000 Hz, 3 axes Non-operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axes |
| Height | 2.38mm |
| Width | 22mm |
| Depth | 80mm |
| Weight | 7.5g |
| 出貨重量 | 0.05 kg |
| 包裝尺寸 | 127 × 102 × 1 mm |
其他版本
同系列產品,記憶體、散熱器或時脈不同 — 下單前請先比較。
Yes, the 2280-S3-M keying matches a standard M.2 2280 slot with an M-key interface.
Installing it in a PCIe 4.0 or 3.0 slot limits the drive to the slower generation's bandwidth.
The 600 TBW rating covers heavy write workloads; typical consumer use reaches this limit after many years.
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