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Green rectangular M.2 2280 circuit board with black controller and silver NAND chips

SanDisk

SanDisk WDS400T2X0E 4TB internal SSD

SKU CH-13PD-HP9TV MPN WDS400T2X0E

4TB M.2 2280 NVMe SSD with 4GB DRAM cache delivers up to 7300 MB/s sequential read and 6600 MB/s write for gaming and heavy workloads

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity4TB
  • Memory Components3D NAND TLC
  • InterfacePCI-Express 4.0 x4
  • 7,300 MBps sequential read accelerates game loading
  • 6,600 MBps sequential write speeds large file saves
  • 1,200,000 IOPS random read keeps gameplay responsive
  • 4GB DRAM cache sustains heavy workloads
  • 2,400 TBW endurance protects long-term data

WD_BLACK SN850X 4TB gaming SSD

The WD_BLACK SN850X 4TB drive uses a PCIe 4.0 x4 interface and NVMe protocol to deliver sequential reads up to 7300 MBps and writes up to 6600 MBps. Its 3D NAND TLC memory and 4GB DRAM cache target enthusiasts who want fast game loads and responsive system performance.

Sustained workload behaviour

Random read performance reaches 1200000 IOPS and random write reaches 1100000 IOPS, supporting heavy multitasking and large texture streaming without rapid throttling. The drive is rated for 2400 TBW and an MTTF of 1.75M hours, indicating endurance for long-term write-intensive use. Adaptive Thermal Management helps regulate temperature during extended sessions.

PCIe 4.0 x4 interface limits

The PCIe 4.0 x4 link caps theoretical throughput near 8GBps, so the 7300 MBps read ceiling sits close to the bus maximum. Systems limited to PCIe 3.0 will restrict sequential speeds to roughly half that figure. The M.2 2280 form factor fits standard motherboard slots, but the drive ships without a heatsink, so thermal headroom depends on platform airflow.

商品特色

  • 7,300 MBps sequential read accelerates game loading
  • 6,600 MBps sequential write speeds large file saves
  • 1,200,000 IOPS random read keeps gameplay responsive
  • 4GB DRAM cache sustains heavy workloads
  • 2,400 TBW endurance protects long-term data

商品規格

BrandWestern Digital
SeriesBLACK SN850X NVMe
ModelWDS400T2X0E
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity4TB
Memory Components3D NAND TLC
InterfacePCI-Express 4.0 x4
ProtocolNVMe
Cache4GB DRAM
Max Sequential ReadUp to 7300 MBps
Max Sequential WriteUp to 6600 MBps
4KB Random ReadUp to 1,200,000 IOPS
4KB Random WriteUp to 1,100,000 IOPS
Terabytes Written (TBW)2400TB
MTTF1.75M Hours
HeatSinkwithout HeatSink
FeaturesGet the Ultimate Gaming Edge
Insane speeds up to 7,300 MB/s deliver top-tier performance with ridiculously short load times for the elite gaming experience you've been waiting for.
Soup Up Your Rig
Extremely low latency loads graphics fast with minimal stutter and lagging for an incredibly smooth, satisfying gaming experience.
More Room for More Games
Today's A-list titles can take up 200GB or more of storage. A range of capacities from 1TB to 4TB means you get to keep more games at the ready and get into the action fast.
Heatsink for the Win
The WD_BLACK SN850X NVMe SSD 1TB and 2TB
Operating Temperature0°C ~ +85°C
Storage Temperature-40°C ~ +85°C
Max Shock Resistance1,500G @0.5 ms half sine
Max Vibration ResistanceOperating Vibration: 5 gRMS, 10-2000 Hz, 3 axes
Non-operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axes
Height2.38mm
Width22.00mm
Depth80.00mm
Weight7.50g
出貨重量0.05 kg
包裝尺寸130 × 102 × 95 mm

商品問答

Does this M.2 2280 drive need a motherboard slot that supports PCIe 4.0 x4 to reach the 7300 MBps read speed?

Yes, a PCIe 4.0 x4 M.2 slot is required for the full 7300 MBps sequential read and 6600 MBps write; on a PCIe 3.0 slot speeds will be lower.

The drive ships without a heatsink — will I need to add one for sustained gaming loads?

The drive includes Adaptive Thermal Management and operates up to 85 °C; a motherboard M.2 heatsink or the optional WD_BLACK heatsink model helps maintain peak throughput during long sessions.

Is the 4GB DRAM cache and 2400 TBW rating sufficient for a primary game and OS drive?

The 4GB DRAM cache accelerates random performance to 1200000 read IOPS and 1100000 write IOPS, while 2400 TBW and 1.75M hour MTTF give ample endurance for heavy daily use.

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