NEMIX RAM DDR5-5600 2TB (16x128GB) ECC RDIMM CL46 1.1V Supermicro H14SST-G memory upgrade
- 2TB (16 x 128GB)
- 288-Pin DDR5 RDIMM
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A-Tech
8GB DDR5 5600 SODIMM module replaces Samsung M425R1GB4BB0-CWM and M425R1GB4PB0-CWM at CL40 1.10V
This 8 GB DDR5 SO-DIMM replaces Samsung M425R1GB4BB0-CWM and M425R1GB4PB0-CWM modules in laptops, notebooks and all-in-one computers. It runs at 5600 MHz with CL40 latency and 1.10 V standard voltage. The unbuffered, non-ECC design fits 262-pin slots.
Operating at the DDR5 standard 1.10 V keeps power draw low and heat minimal in normal laptop workloads. No heat spreader is fitted, so the module relies on the system’s existing airflow. Noise is unaffected because the memory has no moving parts.
The single detail that confirms fit is the exact Samsung part-number match to M425R1GB4BB0-CWM and M425R1GB4PB0-CWM. Buyers needing a different capacity, a registered or ECC module, or a higher-speed grade should verify their system requirements before ordering.
| Brand | A-Tech |
|---|---|
| Series | Compatible Replacement for Samsung |
| Model | M425R1GB4BB0-CWM, M425R1GB4PB0-CWM |
| Capacity | 8GB |
| Type | 262-Pin DDR5 SO-DIMM |
| Speed | DDR5 5600 (PC5 44800) |
| CAS Latency | CL40 |
| Voltage | 1.10V |
| ECC | No |
| Buffered/Registered | Unbuffered |
| Heat Spreader | No |
| Features | M425R1GB4BB0-CWM, M425R1GB4PB0-CWM |
| Recommend Use | Compatible Replacement for Samsung M425R1GB4BB0-CWM, M425R1GB4PB0-CWM |
Align the notch on the module with the slot key, press firmly until both side clips click, then verify the system detects 5600 MHz in BIOS — skipping the clip check leaves the module partially seated.
No routine maintenance is required; if errors appear, run a memory test and replace the stick if it fails, as the module has no user-serviceable parts.
The CAS latency of 40 cycles at 5600 MHz sets the response-time floor, so latency-sensitive workloads hit that timing ceiling before bandwidth saturates.
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