SK hynix HMA42GR7AFR4N-TF 16GB DDR4 2133MHz CL15 ECC Registered Dual Rank 1.2V 288-Pin Server RAM
- 16GB
- 288-Pin DDR4 SDRAM
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Brute Networks
8GB DDR4 registered ECC RDIMM running at 2400MHz CL15 with 1.2V operation for HP server upgrades
This module delivers eight gigabytes of registered DDR4 memory at 2400 MHz with CL15 latency. It is built for HP servers that require ECC registered DIMMs and matches the original HP part number 852545-001. The single-rank 1Rx8 organisation suits standard server memory channels. Buyers needing higher capacities or unbuffered DIMMs cannot use this part.
The DDR4-2400 standard caps data-rate at 2400 MT/s and the registered buffer adds one cycle of command latency per channel. ECC protection is mandatory on this module, so platforms without ECC support will not benefit from the error correction. Systems limited to lower DDR4 speeds will down-clock the module automatically. Builders requiring unregistered or load-reduced DIMMs must choose a different form factor.
The eight-gigabyte density combined with 1Rx8 registered architecture determines whether the module fits the server's memory population rules. Each slot consumes one rank, so maximum system capacity depends on the number of available DIMM slots and the platform's rank limit per channel. Servers that require dual-rank or quad-rank modules for full performance will not reach their optimal configuration with this part.
| Brand | HP |
|---|---|
| Capacity | 8GB |
| Type | 288-Pin DDR4 SDRAM |
| Speed | DDR4 2400 (PC4 19200) |
| CAS Latency | CL15 |
| Voltage | 1.20V |
| ECC | Yes |
| Buffered/Registered | Registered |
| Rank | 1Rx8 |
| Chipset | Major Brand Chipset |
This module is sold as a single 8GB stick; add multiple identical sticks to reach the total memory your server requires.
The module runs at DDR4-2400 with CL15 latency at 1.2V, delivering up to PC4-19200 bandwidth when the platform supports that speed.
The 288-pin registered DDR4 form factor fits compatible HP servers; the register buffers address and command signals so the memory controller can drive larger capacities reliably.
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