SK hynix HMA42GR7AFR4N-TF 16GB DDR4 2133MHz CL15 ECC Registered Dual Rank 1.2V 288-Pin Server RAM
- 16GB
- 288-Pin DDR4 SDRAM
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NEMIX RAM
8GB DDR4-3200 ECC registered DIMM for Supermicro H12DST-B EPYC servers
This 8 GB registered DIMM runs at DDR4 3200 with CL22 latency and 1.20 V operation. It is built specifically for Supermicro H12DST-B motherboards using AMD EPYC processors. The module uses major OEM chips from Samsung, Micron or Hynix and carries a single-rank 1Rx8 organisation.
Error-correcting code detects and corrects single-bit errors while the registered interface reduces electrical load on the memory controller. Together they enable stable operation in multi-DIMM server configurations where unbuffered modules would exceed signal limits. No heat spreader is fitted, allowing tighter spacing in dense chassis.
Buyers who need validated, single-rank 8 GB sticks for this platform can install them with confidence. Builders requiring higher densities, different speeds, unbuffered DIMMs or consumer desktop memory should look elsewhere.
| Brand | NEMIX RAM |
|---|---|
| Series | SuperMicro Server/Workstation Compatible Series Memory |
| Model | SuperMicro DDR4 3200MHZ ECC RDIMM Registered Server Memory |
| Part Number | MR25600-818K1 |
| Capacity | 8GB |
| Speed | DDR4 3200 (PC4 25600) |
| ECC | Yes |
| Buffered/Registered | Registered |
| Chipset | Major OEM Samsung, Micron, Hynix |
| Voltage | 1.20V |
| Compatible System | Supermicro |
| CAS Latency | CL22 |
| Heat Spreader | No |
| Type | 288-Pin DDR4 RDIMM |
| Rank | 1Rx8 |
| Features | DDR4 ECC Registered RDIMM Server Motherboard Compatible |
| Package Content | 8GB (1X8GB) DDR4 3200MHZ PC4-25600 1Rx8 1.2V CL22 288-PIN ECC RDIMM Registered Server Memory |
The modules are stress tested under load and covered by a lifetime replacement warranty from the manufacturer.
The CL22 latency at 3200 MT/s and single-rank 1Rx8 organisation set the bandwidth ceiling under continuous load.
Running at 1.20 V with no heat spreader keeps thermal output low; registered buffering reduces electrical load on the memory controller.
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