NEMIX RAM DDR5-5600 2TB (16x128GB) ECC RDIMM CL46 1.1V Supermicro H14SST-G memory upgrade
- 2TB (16 x 128GB)
- 288-Pin DDR5 RDIMM
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SAMSUNG
8GB DDR3-1866 ECC server memory module with CL13 latency and 1.5V operation
This 8 GB DDR3 module runs at 1866 MHz with a CAS latency of 13 and operates at 1.5 V. It uses a 240-pin form factor and includes error-correcting code for data integrity. The dual-rank design uses Samsung chips in a 512M x 8 configuration. It is built for servers and workstations that require registered ECC memory.
Error-correcting code detects and corrects single-bit errors to prevent data corruption in critical workloads. The dual-rank organisation allows the memory controller to interleave accesses across two 512M x 8 ranks on a single module. No additional software or accessories are included with the module.
The module uses a standard 240-pin DDR3 PCB with Samsung ICs mounted on both sides. Gold edge contacts resist oxidation during repeated seating cycles. The low-profile height fits dense server chassis without blocking adjacent slots or airflow. Unbuffered signalling suits platforms that do not require registered modules.
| Capacity | 8GB |
|---|---|
| Type | 240-Pin DDR3 SDRAM |
| Speed | DDR3 1066 (PC3 8500) |
| CAS Latency | CL13 |
No, DDR3 ECC server memory has no moving parts or serviceable components; once installed correctly it runs until a cell fails, at which point the entire 8 GB stick is replaced.
The CL13 latency at 1.5 V sets the timing ceiling; sustained throughput is bounded by the 1866 MT/s data rate and the dual-rank 512M x 8 organisation.
Each stick draws 1.5 V and is rated for standard DDR3 power envelopes; with no active cooling on the module itself, case airflow handles the resulting heat.
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