SK hynix HMA42GR7AFR4N-TF 16GB DDR4 2133MHz CL15 ECC Registered Dual Rank 1.2V 288-Pin Server RAM
- 16GB
- 288-Pin DDR4 SDRAM
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SAMSUNG
8GB DDR3 registered ECC server memory module running at 1.35V with CL11 latency
This 8 GB registered DIMM uses 240-pin DDR3 SDRAM with ECC and a CL11 latency profile. It is built for servers and workstations that require error correction and signal buffering. The 1.35 V operating voltage helps reduce power draw in dense memory configurations. Systems without registered-memory support cannot use this module.
On-board error-correcting code detects and corrects single-bit errors to protect data integrity. Registered buffering lightens the electrical load on the memory controller, allowing larger total capacities per channel. The 1Rx4 rank organisation suits platforms qualified for single-rank registered DIMMs. No additional software or accessories are included to alter this behaviour.
The standard 240-pin layout fits DDR3 registered DIMM sockets in qualified server boards. Gold-edge contacts resist oxidation in continuously powered environments. Major-brand DRAM chips are used throughout for consistent yield. The 1.35 V specification matches low-voltage DDR3 server platforms; boards locked to 1.5 V will not post with this module.
| Brand | SAMSUNG |
|---|---|
| Model | M393B1G70Bh0-Yk0 |
| Capacity | 8GB |
| Type | 240-Pin DDR3 SDRAM |
| Speed | DDR3 SDRAM |
| CAS Latency | CL11 |
| Voltage | 1.35V |
| ECC | ECC |
| Buffered/Registered | Registered |
| Rank | 1Rx4 |
| Chipset | Major Brand Chipset |
Registered ECC modules add a register that lessens electrical load on the memory controller, which can improve signal integrity and reduce correctable error counts over time.
The CL11 latency and 240-pin DDR3 interface set the timing ceiling; sustained throughput is bounded by the bus clock rather than the CAS figure alone.
Operating at 1.35 V lowers power draw per module versus standard 1.5 V DDR3, reducing thermal load inside a fully populated chassis.
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