BFKK 3U Rackmount Server Chassis EATX/ATX/MATX 4x5.25 6x3.5 Top/Side Cooling
- Rackmount
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SK hynix
Two 4 GB DDR3-1600 SO-DIMM modules at 1.35 V with CL11 latency for laptop upgrades
This kit supplies 8 GB of DDR3 laptop memory as two matched 4 GB SO-DIMM modules. Each stick uses the standard 204-pin layout and runs at DDR3 1600 with a CAS latency of CL11. The low 1.35 V operating voltage suits thin-and-light notebooks that cannot tolerate standard 1.5 V parts.
At 1.35 V the modules draw less current than regular DDR3, so they generate modest heat during typical office or web workloads. No active cooling is required; the chips rely on the laptop’s existing airflow and chassis conduction. Passive operation means zero added fan noise.
The green PCB carries SK hynix DRAM packages in a standard SO-DIMM footprint that slots into any compatible 204-pin socket. Gold edge contacts resist oxidation over repeated upgrades. Because the kit is non-ECC and unbuffered, it works in consumer notebooks but not in servers that require registered or error-correcting memory.
| Brand | Hynix |
|---|---|
| Series | SODIMM Laptop Memory |
| Model | HMT451S6BFR8A-PB |
| Capacity | 8GB (2 x 4GB) |
| Type | 204-Pin DDR3 SO-DIMM |
| Speed | DDR3 1600 (PC3 12800) |
| CAS Latency | CL11 |
| Voltage | 1.35V |
| ECC | No |
Power off the laptop, remove the battery if accessible, open the memory compartment, align the module notch with the slot key, insert at an angle, then press down firmly until the side clips click.
No routine maintenance is required; keep the contacts clean and ensure the laptop vents stay dust-free. Replace the modules only if a memory test reports errors or capacity becomes insufficient.
The CAS latency of CL11 and the 1.35 V operating voltage set the timing and power envelope; sustained heavy workloads will hit those timing constraints before thermal throttling becomes a factor.
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