Mushkin Enhanced Vortex MKNSSDVT2TB-D8 2TB PCIe Gen4 x4 NVMe 1.4 M.2 2280 internal SSD
- Internal Solid Stat…
- Consumer
Mushkin Enhanced
M.2 2280 512 GB NVMe SSD delivers up to 6750 MBps reads and 2635 MBps writes with 250 TBW endurance
Options 512GB
The Mushkin Enhanced Vortex MKNSSDVT512GB-D8 is a 512GB internal solid-state drive built for everyday computing workloads. It uses 3D NAND flash and an InnoGrit IG5236 controller to deliver up to 6750 MBps sequential read and 2635 MBps sequential write speeds. Random performance reaches 200000 IOPS read and 645000 IOPS write.
The single-sided M.2 2280 module plugs directly into a compatible motherboard slot without cables or brackets. MEDS and fourth-generation LDPC ECC protect stored data, while end-to-end data path protection and global wear-levelling extend the drive’s 250TB written endurance. Idle power drops to .1W and active draw peaks at 7W with L1.2 support.
Confirm your board provides an M.2 socket wired for PCIe Gen4 x4 NVMe 1.4 operation; some sockets share lanes with other devices and may limit bandwidth. Check that the system BIOS or UEFI is current enough to recognise the controller and enable features such as NVMe Deallocate and Security Erase. Ensure adequate airflow over the module if the slot sits beneath a graphics card.
| Brand | Mushkin Enhanced |
|---|---|
| Series | Vortex |
| Model | MKNSSDVT512GB-D8 |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 512GB |
| Memory Components | 3D NAND |
| Interface | PCIe Gen4 x4 NVMe 1.4 |
| Controller | InnoGrit IG5236 |
| Max Sequential Read | Up to 6750 MBps |
| Max Sequential Write | Up to 2635 MBps |
| 4KB Random Read | Up to 200,000 IOPS |
| 4KB Random Write | Up to 645,000 IOPS |
| Seek Time | <0.1ms |
| Terabytes Written (TBW) | 250TB |
| MTBF | 1,500,000 hours |
| Features | MEDS (Mushkin Enhanced Data-protection Suite) ensures valuable data is protected - Built-in 4th Generation LDPC ECC provides the most-powerful data correction level in use today - End-to-end data path protection - SLC Caching - DRAM Cache Buffer - L1.2 power mode support for ultra-low power consumption - Global wear-leveling evens program/erase counts across data blocks to extend lifespan Enhanced Power Management NVMe Security Erase support NVMe Deallocate function support (NVMe equivalent of TRIM command) High-reliability 3D NAND flash S.M.A.R.T. support Temperature sensor RoHS, FC |
| Power Consumption (Idle) | 0.1W |
| Power Consumption (Active) | 7W |
| Operating Temperature | 0°C ~ +70°C |
| Storage Temperature | -40°C ~ +85°C |
| Max Shock Resistance | 1500G |
| Height | 3.80mm |
| Width | 22.00mm |
| Depth | 80.00mm |
| Weight | 7.00g |
| 出貨重量 | 0.05 kg |
| 包裝尺寸 | 127 × 102 × 10 mm |
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The interface supports up to 6750 MBps sequential read and 2635 MBps sequential write on the MKNSSDVT512GB-D8.
It fits a standard M.2 2280 slot — 22 mm wide, 80 mm long — secured by a single motherboard standoff screw.
Insert the drive at an angle into the M.2 slot, press flat, and fasten the standoff screw; many forget to enable the NVMe controller in BIOS before cloning or installing an OS.
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