SAMSUNG 850 EVO 250GB 2.5" SATA Internal SSD MZ-75E250B/AM
- Internal Solid Stat…
- Consumer
SAMSUNG
A 2.5 inch SATA solid state drive with 500GB capacity, 32 layer 3D V-NAND and a 512MB DDR3 cache delivering up to 540 MBps read and 520 MBps write speeds
The Samsung 850 EVO 500 GB is a 2.5 inch internal SSD built with 32 layer 3D V-NAND and a Samsung MGX controller. It targets consumers who want faster boot times and application loading on laptops or desktops that still use the SATA interface. Sequential read reaches up to 540 MBps and write up to 520 MBps.
The drive slides into a standard 2.5 inch slot and connects through the existing SATA III cable and power connector. No extra adapter or mounting bracket is required beyond what the chassis already provides. Low idle power of 50 mW and an average active draw of 3.0 W leave more headroom for other components in compact builds.
A 512 MB Low Power DDR3 SDRAM cache helps sustain random read performance up to 98,000 IOPS and random write up to 90,000 IOPS at queue depth 32. The bundled Samsung Magician utility enables firmware updates, drive health monitoring and performance benchmarking so the SSD stays optimised over its 2,000,000 hour MTBF rating.
| Brand | SAMSUNG |
|---|---|
| Series | 850 EVO |
| Model | MZ-75E500B/AM |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | 2.5" |
| Capacity | 500GB |
| Memory Components | 32 layer 3D V-NAND |
| Interface | SATA III |
| Controller | Samsung MGX Controller |
| Cache | 512MB Low Power DDR3 SDRAM |
| Max Sequential Read | Up to 540 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | Random Read (4KB, QD32): Up to 98,000 IOPS Random Read (4KB, QD1): Up to 10,000 IOPS |
| 4KB Random Write | Random Write (4KB, QD32): Up to 90,000 IOPS Random Write (4KB, QD1): Up to 40,000 IOPS |
| MTBF | 2,000,000 hours |
| Features | Upgrade virtually every aspect of your computer's performance with Samsung's new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you'll get the 850 EVO's new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before. |
| Power Consumption (Idle) | 50 mW |
| Power Consumption (Active) | Average: 3.0W Maximum: 3.5W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Height | 6.86mm |
| Width | 69.85mm |
| Depth | 100.08mm |
| 出貨重量 | 0.23 kg |
| 包裝尺寸 | 145 × 145 × 18 mm |
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The 512MB Low Power DDR3 SDRAM cache handles burst traffic; once it fills, sustained writes fall back to the 3D V-NAND at up to 520 MBps sequential.
Active power averages 3.0 W with a 3.5 W burst ceiling; idle power is 50 mW, and the operating range is 0 °C to 70 °C.
A standard 2.5-inch SATA III drive bay and a SATA data plus power cable are required.
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