SAMSUNG 860 EVO MZ-76E250E 2.5" 250GB SATA internal SSD
- Internal Solid Stat…
- Consumer
SAMSUNG
A 4 TB 2.5 inch SATA internal SSD delivering sequential speeds up to 550 MBps read and 520 MBps write with 4 GB LPDDR4 cache and 64-layer V-NAND
The Samsung 860 EVO MZ-76E4T0E is a 2.5-inch internal solid state drive with a 4TB capacity. It uses a SATA III interface and Samsung V-NAND 3-bit MLC memory with a Samsung MJX controller and 4GB LPDDR4 cache. It is built for everyday computing in mainstream PCs and laptops.
The drive fits any standard 2.5-inch SATA bay and connects with a regular SATA data and power cable. No special drivers are required for modern operating systems. A frequent mistake is connecting the drive to a SATA II port, which limits the sequential speeds well below the rated 550 MBps read and 520 MBps write.
The single figure that determines fit is the 4TB capacity. It provides space for large media libraries, games and backups on a SATA platform. The drive is rated for up to 2400 TBW over five years with an MTBF of 1500000 hours. Active power draw peaks at 4.0W and averages 3.0W, while idle power is a maximum of .5W.
| Brand | SAMSUNG |
|---|---|
| Series | 860 EVO Series |
| Model | MZ-76E4T0E |
| Part Number | MZ-76E4T0E |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | 2.5" |
| Capacity | 4TB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | SATA III |
| Controller | Samsung MJX |
| Cache | 4GB LPDDR4 |
| Max Sequential Read | Up to 550 MBps |
| Max Sequential Write | Up to 520 MBps |
| 4KB Random Read | 4KB, QD32: Up to 98,000 IOPS 4KB, QD1: Up to 10,000 IOPS |
| 4KB Random Write | 4KB, QD32: Up to 90,000 IOPS 4KB, QD1: Up to 42,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Samsung V-NAND Technology Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint. Fast Read/Write Performance The 860 PRO performs at sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s with a robust a robust algorithm-based Samsung MJX controller (up to 1 GHz). Relentless Endurance With an industry warranty offering up |
| Power Consumption (Idle) | Idle: Max. 0.5W (4TB) Device Sleep: 2 mW (4TB) |
| Power Consumption (Active) | Active Read/Write: Max. 4.0W (4TB) / Avg. 3.0W (4TB) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 7.00mm |
| Width | 70.00mm |
| Depth | 100.00mm |
| Weight | 95.25g |
| 出貨重量 | 0.14 kg |
| 包裝尺寸 | 145 × 98 × 21 mm |
其他版本
同系列產品,記憶體、散熱器或時脈不同 — 下單前請先比較。
Run a benchmark such as CrystalDiskMark using a 1 GiB test file on a SATA III port; the sequential read result should approach 550 MBps and the 4 KB QD32 random read should reach about 98,000 IOPS.
The box holds only the 2.5" 4 TB drive; you must provide a SATA data cable, a SATA power connection and a 2.5" drive bay or adapter for your chassis.
The 4 TB model carries the 2,400 TBW rating for the five-year warranty period; smaller capacities have lower TBW values.
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