SAMSUNG 970 EVO MZ-V7E500E 500GB internal SSD
- Internal Solid Stat…
- Consumer
SAMSUNG
M.2 2280 NVMe SSD with 2TB capacity, sequential read up to 3500 MBps and write up to 2500 MBps
The Samsung 970 EVO MZ-V7E2T0E is a 2TB internal solid state drive built for consumer PCs. It uses the M.2 2280 form factor and connects through a PCIe Gen 3.0 x4 interface with NVMe 1.3 protocol. Samsung V-NAND 3-bit MLC memory and a Phoenix controller deliver sequential reads up to 3500 MBps and writes up to 2500 MBps.
This drive suits users upgrading a system with a PCIe Gen 3.0 x4 M.2 slot who want high endurance and strong random performance of 500,000 read IOPS and 480,000 write IOPS at QD32. Buyers building a new platform that wires the M.2 slot directly to a PCIe 4.0 or 5.0 CPU should look at a Gen 4 or Gen 5 drive to use the full bandwidth of that platform.
The single specification that decides fit is the maximum sequential read speed of 3500 MBps, which marks the ceiling of the PCIe Gen 3.0 x4 interface. If your workload needs sustained throughput above that figure, this drive will bottleneck the task; if 3500 MBps meets your target, the 2TB capacity and 1,500,000-hour MTBF give ample space and reliability.
| Brand | SAMSUNG |
|---|---|
| Series | 970 EVO |
| Model | MZ-V7E2T0E |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 2TB |
| Memory Components | V-NAND 3-bit MLC |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
| Controller | Samsung Phoenix |
| Cache | 2GB Low Power DDR4 SDRAM |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 2500 MBps |
| 4KB Random Read | QD32: Up to 500,000 IOPS QD1: Up to 15,000 IOPS |
| 4KB Random Write | QD32: Up to 480,000 IOPS QD1: Up to 50,000 IOPS |
| MTBF | 1,500,000 hours |
| Features | Non-Volatile Memory Express (NVMe) 970 EVO 2TB NVMe SSDs with a newly enhanced Phoenix controller outperform our previous 960 EVO 2TB model with exceptionally fast sequential read/write speeds up to 3,500/2,500 MB/s. They also support PCI Express (PCIe) Gen 3 x4 lanes to provide high bandwidth and low latency, making them perfect for business professionals who need cutting edge-performance for high-end computing. TurboWrite Technology Samsung's intelligent TurboWrite technology helps to maximize your computing ability, accelerating write speeds above and beyond the already exceptiona |
| Power Consumption (Idle) | 30 mW (max) |
| Power Consumption (Active) | Average: 6W / Maximum: 10W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.38mm |
| Width | 22.15mm |
| Depth | 80.15mm |
| Weight | 8.00g |
| 出貨重量 | 0.08 kg |
| 包裝尺寸 | 141 × 98 × 24 mm |
其他版本
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The drive uses the M.2 2280 form factor and requires an M.2 slot keyed for PCIe NVMe; check your device manual for slot length and keying compatibility.
It is designed for PCIe Gen 3.0 x4 and NVMe 1.3; the slot must provide four lanes to achieve the quoted sequential read and write figures.
Active power averages 6W with a maximum burst of 10W, while idle power is a maximum of 30 mW, so a standard M.2 power rail is sufficient.
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