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Green printed circuit board M.2 2280 SSD with black controller and silver label

SAMSUNG

SAMSUNG 990 2TB M.2 2280 PCIe 4.0 x4 internal SSD

SKU CH-56PD-EGNQ6

High-capacity 2TB internal SSD delivering up to 7,250 MB/s sequential read and 6,450 MB/s sequential write speeds for fast game loads and large file transfers

  • Max Sequential ReadUp to 7,250 MB/s
  • Max Sequential WriteUp to 6,450 MB/s
  • 4KB Random ReadUp to 850,000 IOPS
  • 4KB Random WriteUp to 1,200,000 IOPS
  • Terabytes Written (TBW)800TB
  • ControllerIn-House Controller

Capacity 2TB

  • Up to 7,250 MB/s sequential read accelerates game loading and large-file transfers
  • Up to 6,450 MB/s sequential write speeds project exports and install updates
  • Up to 1,200,000 IOPS random write keeps multitasking responsive under heavy workloads
  • 800 TBW endurance rating supports long-term archival of 4K footage and growing libraries
  • AES 256-bit hardware encryption protects data without software overhead

Capacity and Interface

The Samsung 990 is a 2 TB internal solid-state drive built in the M.2 2280 form factor and connected through a PCIe 4.0 x4 link. It uses Samsung V-NAND and an in-house controller with Host Memory Buffer caching. The drive supports NVMe 2.0 and hardware-based AES 256 encryption with TCG Opal 2.0 and IEEE 1667 compliance.

Ideal Users and Limits

This drive suits desktop builders, game collectors and digital archivists who want a large, fast library without deleting titles or offloading footage. The 800 TBW rating and strong random IOPS handle heavy write workloads. Systems limited to PCIe 3.0 or lacking an M.2 slot will not reach the advertised throughput and should consider a different interface.

Sequential Read Speed

The headline figure is a maximum sequential read of 7,250 MB/s, paired with a 6,450 MB/s sequential write. Those speeds decide whether the drive can feed a GPU-direct storage pipeline or saturate a PCIe 4.0 x4 lane during large game loads and 4 K media transfers. If the workload rarely hits sustained sequential queues, a slower, cheaper drive may be more cost-effective.

商品特色

  • Up to 7,250 MB/s sequential read accelerates game loading and large-file transfers
  • Up to 6,450 MB/s sequential write speeds project exports and install updates
  • Up to 1,200,000 IOPS random write keeps multitasking responsive under heavy workloads
  • 800 TBW endurance rating supports long-term archival of 4K footage and growing libraries
  • AES 256-bit hardware encryption protects data without software overhead

商品規格

Max Sequential ReadUp to 7,250 MB/s
Max Sequential WriteUp to 6,450 MB/s
4KB Random ReadUp to 850,000 IOPS
4KB Random WriteUp to 1,200,000 IOPS
Terabytes Written (TBW)800TB
ControllerIn-House Controller
Form FactorM.2 2280
Capacity2TB
InterfacePCI-Express 4.0 x4
Memory ComponentsSamsung V NAND
ProtocolNVMe 2.0
CacheHMB (Host Memory Buffer)
EncryptionClass 0 (AES 256) , TCG/Opal v2.0, MS eDrive (IEEE1667)
Power Consumption (Active)Read/Write, Average: 4.3W / 3.8W
Power Consumption (Idle)PS3 APST on / PS4 L1.2: Typical 55mW / Typical 3mW
BrandSAMSUNG
Series990
ModelMZ-V9V2T0BW
Part NumberMZ-V9V2T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Height2.38mm
Width22.15mm
Depth80.15mm
Weight6g

其他版本

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同系列產品，記憶體、散熱器或時脈不同 — 下單前請先比較。

商品問答

Will the M.2 2280 form factor fit my desktop motherboard slot?

The drive uses the standard M.2 2280 form factor, measuring 22 mm wide by 80 mm long, which fits most modern desktop motherboards with an M.2 key-M slot.

How do I install the drive and which step is often missed?

Insert the drive at an angle into the PCIe 4.0 x4 M.2 slot, secure it with the motherboard screw, then enable NVMe in the BIOS so the operating system can detect it.

When will the Samsung V NAND memory need replacement based on endurance?

The drive is rated for 800 TBW, meaning you can write up to 800 terabytes before the warranty endurance limit is reached.

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