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SAMSUNG

SAMSUNG 860 EVO M.2 2280 1TB SATA internal SSD MZ-N6E1T0BW

SKU CH-37A4-9H380 MPN MZ-N6E1T0BW

M.2 2280 SATA internal SSD with 1TB capacity, sequential read up to 550 MBps and write up to 520 MBps, plus AES 256-bit encryption

  • Device TypeInternal Solid State Drive (SSD)
  • Used ForConsumer
  • Form FactorM.2 2280
  • Capacity1TB
  • Memory ComponentsV-NAND 3-bit MLC
  • InterfaceSATA III

Options 1TB

  • Fast sequential transfers with up to 550 MB/s read and 520 MB/s write speeds
  • Strong random performance reaching 97,000 IOPS read and 88,000 IOPS write at QD32
  • Hardware AES 256-bit encryption protects data with TCG Opal and IEEE 1667 compliance
  • High endurance rated for 600 TB written and 1.5 million hours MTBF
  • Efficient power use averaging 3.0 W active with 4.5 W maximum burst

1TB SATA M.2 SSD for everyday computing

This 1TB internal solid state drive uses the M.2 2280 form factor and a SATA III interface, making it suitable for laptops and desktops that support SATA-based M.2 slots. It is built with Samsung V-NAND 3-bit MLC memory and an MJX controller backed by 1GB of Low Power DDR4 SDRAM cache for consumer workloads.

Sustained write behaviour with 600TB endurance

The drive is rated for 600TB total bytes written and a 1,500,000 hour MTBF, indicating durability for long-term workloads. Sequential write speeds reach up to 520 MBps, while 4KB random write performance scales from 42,000 IOPS at QD1 to 88,000 IOPS at QD32, allowing steady throughput during extended file transfers or rendering tasks.

Low power draw and broad temperature range

Active power consumption averages 3.0W with a maximum burst of 4.5W, keeping heat output modest in typical use. The operating temperature range spans 0°C to 70°C, and the drive includes AES 256-bit hardware encryption compliant with TCG Opal and IEEE 1667 standards for data security without a performance penalty.

Highlights

  • Fast sequential transfers with up to 550 MB/s read and 520 MB/s write speeds
  • Strong random performance reaching 97,000 IOPS read and 88,000 IOPS write at QD32
  • Hardware AES 256-bit encryption protects data with TCG Opal and IEEE 1667 compliance
  • High endurance rated for 600 TB written and 1.5 million hours MTBF
  • Efficient power use averaging 3.0 W active with 4.5 W maximum burst

Specifications

BrandSAMSUNG
Series860 EVO Series
ModelMZ-N6E1T0BW
Part NumberMZ-N6E1T0BW
Device TypeInternal Solid State Drive (SSD)
Used ForConsumer
Form FactorM.2 2280
Capacity1TB
Memory ComponentsV-NAND 3-bit MLC
InterfaceSATA III
ControllerMJX
Cache1GB Low Power DDR4 SDRAM
Max Sequential ReadUp to 550 MBps
Max Sequential WriteUp to 520 MBps
4KB Random ReadQD1: Up to 10,000 IOPS
QD32: Up to 97,000 IOPS
4KB Random WriteQD1: Up to 42,000 IOPS
QD32: Up to 88,000 IOPS
MTBF1,500,000 hours
FeaturesTBW: 600TB
Trim Support: Yes
AES Encryption: AES 256-bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive)
S.M.A.R.T. Support: Yes
GC (Garbage Collection): Auto Garbage Collection Algorithm
WWN Support: World Wide Name supported
Device Sleep Mode Support: Yes
Management SW: Magician Software for SSD management
Power Consumption (Active)Average: 3.0W
Maximum: 4.5W (Burst mode)
Operating Temperature0°C ~ +70°C
Max Shock Resistance1,500G & 0.5 ms (Half sine)
Height2.30mm
Width22.00mm
Depth80.00mm
Weight80.00g
Shipping weight0.08 kg
Package size142 × 97 × 23 mm

Other versions of this model

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Questions about this item

How much heat and power does the 860 EVO M.2 draw during all-day use?

The drive averages 3.0 W in active operation and peaks at 4.5 W in burst mode, with an operating temperature range of 0 °C to 70 °C.

What must my motherboard provide for this M.2 2280 SATA III drive to work?

An M.2 slot keyed for SATA III (6 Gb/s) and a mounting screw; the drive includes no cables or brackets.

Will the 860 EVO M.2 run alongside my older SATA 3 Gb/s SSD or HDD without slowing down?

Yes — it negotiates SATA III (6 Gb/s) but is backward compatible with SATA 3 Gb/s ports, and its 1 GB DDR4 cache handles mixed workloads independently.

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