Intel 660p Series SSDPEKNW512G8X1 512GB M.2 2280 PCIe 3.0 x4 NVMe internal SSD
- Internal Solid Stat…
- Consumer
Intel
A 1TB M.2 2280 PCIe NVMe 3.0 x4 internal SSD using QLC 3D NAND for up to 1800 MBps sequential speeds and 200TB endurance
This Intel 660p Series drive provides 1TB of storage in an M.2 2280 form factor. It connects through a PCIe 3.0 x4 interface using the NVMe protocol. The drive uses 3D QLC NAND and operates without a DRAM cache, relying on host memory buffer technology. It is built for everyday consumer workloads in notebooks and desktops.
Intel QLC technology packs more bits per cell than TLC, allowing greater capacity in the same physical footprint. The PCIe interface removes the bandwidth ceiling of SATA, delivering up to 1800 MBps sequential read and write. Random performance reaches 150000 IOPS read and 220000 IOPS write. Endurance is rated at 200 TBW with a 1.6 million hour MTBF.
This drive fits users who want a large, low-cost NVMe boot or data drive for general computing. It is less suited for sustained heavy write workloads or professional applications that demand consistent high performance and DRAM-backed caching. Those buyers should consider TLC-based alternatives with dedicated DRAM.
| Brand | Intel |
|---|---|
| Series | 660p Series |
| Model | SSDPEKNW010T8X1 |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 1TB |
| Memory Components | 3D2, QLC |
| Interface | PCIe NVMe 3.0 x4 |
| Cache | No DRAM (HMB) |
| Max Sequential Read | Up to 1800 MBps |
| Max Sequential Write | Up to 1800 MBps |
| 4KB Random Read | Up to 150,000 IOPS |
| 4KB Random Write | Up to 220,000 IOPS |
| Terabytes Written (TBW) | 200TB |
| MTBF | 1,600,000 hours |
| Features | Empowered by Intel's innovative Intel's 3D NAND QLC technology, this SSD offers higher capacities at a lower cost than TLC-based storages. With PCIe, the new Intel SSD 660p skips SATA and its limitations. The future of storage is built on PCIe, NVMe and QLC technologies, so choose the Intel SSD 660p, ideal for Laptops and Desktops running everyday computing applications. Compared to TLC's capacity, Intel 3D NAND QLC technology stores more bits per cell, allowing for higher capacity, faster read performance and lower power consumption per drive. This technology makes the most of small |
| Power Consumption (Idle) | 40 mW |
| Power Consumption (Active) | 100 mW |
| Operating Temperature | 0°C ~ +70°C |
| Storage Temperature | -55°C ~ +95°C |
| Operating Humidity | 5-95% |
| Max Shock Resistance | Operating: 1000G / 0.5 ms Non-Operating: 1500G / 0.5 ms |
| Max Vibration Resistance | Operating: 2.17 GRMS (5-700 Hz) Non-Operating: 3.13 GRMS (5-800 Hz) |
| Height | 2.38mm |
| Width | 22.00mm |
| Depth | 80.00mm |
| Weight | < 10.00g |
| 出貨重量 | 0.11 kg |
| 包裝尺寸 | 165 × 124 × 23 mm |
其他版本
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The 200 TBW rating means the Intel 660p 1TB is warrantied for 200 terabytes of data written; typical consumer workloads rarely reach this limit within the drive's useful life.
After the dynamic SLC cache fills, sequential write speeds on the QLC NAND can drop well below the 1800 MB/s peak during long, continuous transfers.
The drive draws 40 mW at idle and 100 mW during active operation, producing minimal heat inside a laptop or desktop chassis.
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