SAMSUNG 970 EVO MZ-V7E500BW 500GB internal SSD
- Internal Solid Stat…
- Consumer
SAMSUNG
A 2TB M.2 2280 internal SSD delivering up to 3500 MBps sequential read and 2500 MBps sequential write with 2GB LPDDR4 DRAM cache
The Samsung 970 EVO MZ-V7E2T0BW is a 2TB internal solid state drive built for consumer workloads. It uses the M.2 2280 form factor and connects through a PCIe Gen3 x4 interface with NVMe 1.3 protocol. The drive suits desktops and laptops that need fast storage for operating systems, applications and large media files.
The Samsung Phoenix controller manages the 64-layer V-NAND MLC flash and a 2GB LPDDR4 DRAM cache. This combination delivers sequential reads up to 3500 MBps and sequential writes up to 2500 MBps. Random read performance reaches 500,000 IOPS at QD32 and 15,000 IOPS at QD1, while random write hits 480,000 IOPS at QD32. Samsung Magician software enables cloning, firmware updates and performance optimisation.
The 2TB capacity provides ample room for games, creative projects and system images. Endurance is rated for heavy daily writes over the warranty period. Active power draw averages 6W with a 10W burst ceiling, while idle consumption stays at 30 mW. The drive operates between 0°C and 70°C and withstands 1,500G shock, ensuring reliability in portable and desktop systems.
| Brand | SAMSUNG |
|---|---|
| Series | 970 EVO |
| Model | MZ-V7E2T0BW |
| Device Type | Internal Solid State Drive (SSD) |
| Used For | Consumer |
| Form Factor | M.2 2280 |
| Capacity | 2TB |
| Memory Components | 64L V-NAND MLC |
| Interface | PCIe Gen3. X4, NVMe 1.3 |
| Controller | Samsung Phoenix Controller |
| Cache | 2GB LPDDR4 DRAM |
| Max Sequential Read | Up to 3500 MBps |
| Max Sequential Write | Up to 2500 MBps |
| 4KB Random Read | QD32: Up to 500,000 IOPS QD1: Up to 15,000 IOPS |
| 4KB Random Write | QD32: Up to 480,000 IOPS |
| MTBF | 1,500,000 hours |
| Power Consumption (Idle) | Max. 30 mW |
| Power Consumption (Active) | Average: 6W Maximum: 10W (Burst mode) |
| Operating Temperature | 0°C ~ +70°C |
| Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
| Height | 2.30mm |
| Width | 22.10mm |
| Depth | 80.26mm |
| Weight | 7.94g |
| 出貨重量 | 0.08 kg |
| 包裝尺寸 | 141 × 98 × 24 mm |
其他版本
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The drive is rated for up to 1,200 TBW total bytes written, which represents the endurance limit of the 64-layer V-NAND MLC memory.
The operating temperature ceiling is 70 °C; Samsung's Dynamic Thermal Guard throttles performance once this threshold is approached to protect the controller and NAND.
Active power averages 6 W with bursts up to 10 W; idle power is a maximum of 30 mW, so heat output scales directly with those wattage levels.
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